MRF5S21130HSR5 vs MRF5S21100HSR5 비교

다음의 상세 나란히 비교: MRF5S21130HSR5 제조: NXP Semiconductors 및 MRF5S21100HSR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF5S21130HSR5 MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 Obsolete
NXP Semiconductors
MRF5S21100HSR5 MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 ✓ 활성

사양 비교

파라미터 MRF5S21130HSR5 MRF5S21100HSR5
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 Obsolete 활성
재고 상태 In Stock In Stock
단가 (USD) $33.40 $19.80
Manufacturer NXP Semiconductors (formerly Freescale, Motorola) NXP Semiconductors (formerly Freescale Semiconductor)
Part Number MRF5S21130HSR5 —
트랜지스터 유형 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel RF Power MOSFET
Series RF MOSFET Line / HV5 —
Operating Frequency 2.11 GHz to 2.17 GHz 2.16 GHz to 2.17 GHz
Test Voltage (Vdd) 28 V —
Test Current (Idq) 1.2 A —
Power Output (Pout) 28 W (CW) —
Power Gain 13.5 dB (typical) 13.5 dB (typical)
Drain-Source Voltage (Vdss Rated) 65 V —
패키지 / 케이스 NI-880S ceramic NI-780S (ceramic flange-mount)
실장 유형 Surface Mount (SMT) with ceramic body Chassis / Flange Mount (through-hole RF)
Application W-CDMA base station, TDMA/CDMA, multi-carrier amplifier —
Status Obsolete (last-time-buy windows closed at authorized distributors) —
Tape and Reel Pack R5 suffix = 500-piece reel —
Orderable Lead-Free Status [DATA_NEEDED: lead-free status from NXP PCN] —
Part Status — Active
Technology — LDMOS (Laterally Diffused MOS)
Drain-to-Source Voltage (Vdss) Max — 65 V
Test Supply Voltage — 28 V
Output Power (Pout) — 23 W (CW)
Drain Current (Id) — 1.05 A
동작 온도 범위 — -40C to +150C (junction)
RoHS 상태 — [DATA_NEEDED: RoHS status from NXP product page]
Lead-Free — [DATA_NEEDED: lead-free finish]

데이터시트 & 자료

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