MRF6S23140HR3 vs MRF6S27050HR5 Comparación

Comparación detallada lado a lado de MRF6S23140HR3 por NXP Semiconductors y MRF6S27050HR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ Activo
NXP Semiconductors
MRF6S27050HR5 MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 Obsolete

Comparación de especificaciones

Parámetro MRF6S23140HR3 MRF6S27050HR5
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Obsolete
Estado del stock In Stock In Stock
Precio unitario (USD) $65,00 $17,50
Tipo de transistor LDMOS, N-Channel Enhancement-Mode LDMOS, N-Channel, RF Power
Technology Lateral N-Channel RF Power MOSFET —
Drain-Source Voltage (Rated) 68 V —
Operating Drain Voltage (Typical) 28 V —
Test Quiescent Drain Current 1.3 A —
Operating Frequency Range 2300 MHz to 2400 MHz —
Test Frequency 2.39 GHz —
Output Power (Average, 2 x W-CDMA) 28 W —
Power Gain 15.2 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Encapsulado / Carcasa NI-880H-2L (CASE 465B-03, STYLE 1) NI-780H-2L
Tipo de montaje Chassis / Flange Mount Chassis Mount / Screw Flange
Configuration Single, push-pull capable —
Input Matching Internally matched (per datasheet) —
Rango de temperatura de funcionamiento [DATA_NEEDED: operating temperature range] —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Lead-Free [DATA_NEEDED: lead-free status] —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Status — Obsolete
Frequency — 2.62 GHz (operating band)
Test Voltage (Vds) — 28 V
Current Rating — [DATA_NEEDED: continuous/maximum drain current]
Test Current — 500 mA
Power Gain (Gps) — 16 dB (typical at 2.62 GHz)
Power Output — 7 W
Voltage - Rated (Vds max) — 68 V
Supplier Device Package — NI-780
Temperatura de funcionamiento — [DATA_NEEDED: operating temperature range]
Nivel MSL — Not applicable (non-surface-mount ceramic package)
Primary Application — WCDMA / UMTS base-station PA driver and final stage

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