MRF6S23140HR3 vs MRF6S27050HR5 Vergleich
Detaillierter Direktvergleich von MRF6S23140HR3 von NXP Semiconductors und MRF6S27050HR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors
MRF6S23140HR3 ✓ AktivNXP Semiconductors
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
MRF6S27050HR5 ObsoleteSpezifikationsvergleich
| Parameter | MRF6S23140HR3 | MRF6S27050HR5 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $65,00 | $17,50 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode | LDMOS, N-Channel, RF Power |
| Technology | Lateral N-Channel RF Power MOSFET | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Operating Drain Voltage (Typical) | 28 V | — |
| Test Quiescent Drain Current | 1.3 A | — |
| Operating Frequency Range | 2300 MHz to 2400 MHz | — |
| Test Frequency | 2.39 GHz | — |
| Output Power (Average, 2 x W-CDMA) | 28 W | — |
| Power Gain | 15.2 dB | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Gehäuse / Bauform | NI-880H-2L (CASE 465B-03, STYLE 1) | NI-780H-2L |
| Montageart | Chassis / Flange Mount | Chassis Mount / Screw Flange |
| Configuration | Single, push-pull capable | — |
| Input Matching | Internally matched (per datasheet) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | — | Obsolete |
| Frequency | — | 2.62 GHz (operating band) |
| Test Voltage (Vds) | — | 28 V |
| Current Rating | — | [DATA_NEEDED: continuous/maximum drain current] |
| Test Current | — | 500 mA |
| Power Gain (Gps) | — | 16 dB (typical at 2.62 GHz) |
| Power Output | — | 7 W |
| Voltage - Rated (Vds max) | — | 68 V |
| Supplier Device Package | — | NI-780 |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| MSL-Level | — | Not applicable (non-surface-mount ceramic package) |
| Primary Application | — | WCDMA / UMTS base-station PA driver and final stage |