MRF6S23140HR3 vs MRF6S27050HR5 Comparação

Comparação detalhada lado a lado de MRF6S23140HR3 por NXP Semiconductors e MRF6S27050HR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ Ativo
NXP Semiconductors
MRF6S27050HR5 MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 Obsolete

Comparação de especificações

Parâmetro MRF6S23140HR3 MRF6S27050HR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $65,00 $17,50
Tipo de transistor LDMOS, N-Channel Enhancement-Mode LDMOS, N-Channel, RF Power
Technology Lateral N-Channel RF Power MOSFET —
Drain-Source Voltage (Rated) 68 V —
Operating Drain Voltage (Typical) 28 V —
Test Quiescent Drain Current 1.3 A —
Operating Frequency Range 2300 MHz to 2400 MHz —
Test Frequency 2.39 GHz —
Output Power (Average, 2 x W-CDMA) 28 W —
Power Gain 15.2 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Encapsulamento / Caixa NI-880H-2L (CASE 465B-03, STYLE 1) NI-780H-2L
Tipo de montagem Chassis / Flange Mount Chassis Mount / Screw Flange
Configuration Single, push-pull capable —
Input Matching Internally matched (per datasheet) —
Faixa de temperatura de operação [DATA_NEEDED: operating temperature range] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Lead-Free [DATA_NEEDED: lead-free status] —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Status — Obsolete
Frequency — 2.62 GHz (operating band)
Test Voltage (Vds) — 28 V
Current Rating — [DATA_NEEDED: continuous/maximum drain current]
Test Current — 500 mA
Power Gain (Gps) — 16 dB (typical at 2.62 GHz)
Power Output — 7 W
Voltage - Rated (Vds max) — 68 V
Supplier Device Package — NI-780
Temperatura de operação — [DATA_NEEDED: operating temperature range]
Nível MSL — Not applicable (non-surface-mount ceramic package)
Primary Application — WCDMA / UMTS base-station PA driver and final stage

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