MRF6S9045NR1 vs MRF9030MBR1 Comparación

Comparación detallada lado a lado de MRF6S9045NR1 por NXP Semiconductors y MRF9030MBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Activo
NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ Activo

Comparación de especificaciones

Parámetro MRF6S9045NR1 MRF9030MBR1
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $16,40 $25,80
Tipo de transistor LDMOS, N-Channel Enhancement-Mode N-Channel Enhancement-Mode Lateral MOSFET
Technology Lateral MOSFET (RF Power) —
Drain-Source Voltage (VDS) Rated 68 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Continuous Drain Current (ID) 10 uA (rated) —
Quiescent Current (IDQ) 350 mA —
Output Power (Pout) 10 W Avg. —
Operating Frequency 880 MHz (up to 1000 MHz) —
Power Gain 22.7 dB —
Drain Efficiency [DATA_NEEDED: typical efficiency percentage at Pout=10W] —
Encapsulado / Carcasa TO-270-2 (Case 1265-09, Style 1) —
Tipo de montaje Surface Mount Surface Mount (flanged ceramic)
Lead-Free / RoHS Yes (N suffix = lead-free terminations) —
VSWR Ruggedness Infinite VSWR at rated VDD —
Application 880 MHz Single-Carrier N-CDMA Base Station PA Broadband RF power amplifier / large-signal common-source amplifier
Manufacturer Freescale Semiconductor (acquired by NXP) NXP Semiconductors (formerly Freescale / Motorola)
Part Family — RF Sub-Micron MOSFET Line
Configuration — Single, common-source
Typical Output Power — 30 W at 945 MHz
Operating Frequency Range — DC to 1000 MHz
Power Gain (typical) — 20 dB
Drain-Source Voltage (Vds) Rating — 26 V
Typical Bias Current — 250 mA
Encapsulado — TO-272-2 (ceramic, 2-lead flanged)
Maximum Dissipation (per Partstack) — 139 W
Nivel de sensibilidad a la humedad (MSL) — 3
Polarity / Channel Mode — N-Channel, enhancement-mode
Estado RoHS — [DATA_NEEDED: RoHS compliance status from manufacturer page]

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