MRF6S9045NR1 vs MRF9030MBR1 Vergleich

Detaillierter Direktvergleich von MRF6S9045NR1 von NXP Semiconductors und MRF9030MBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Aktiv
NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6S9045NR1 MRF9030MBR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $16,40 $25,80
Transistortyp LDMOS, N-Channel Enhancement-Mode N-Channel Enhancement-Mode Lateral MOSFET
Technology Lateral MOSFET (RF Power) —
Drain-Source Voltage (VDS) Rated 68 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Continuous Drain Current (ID) 10 uA (rated) —
Quiescent Current (IDQ) 350 mA —
Output Power (Pout) 10 W Avg. —
Operating Frequency 880 MHz (up to 1000 MHz) —
Power Gain 22.7 dB —
Drain Efficiency [DATA_NEEDED: typical efficiency percentage at Pout=10W] —
Gehäuse / Bauform TO-270-2 (Case 1265-09, Style 1) —
Montageart Surface Mount Surface Mount (flanged ceramic)
Lead-Free / RoHS Yes (N suffix = lead-free terminations) —
VSWR Ruggedness Infinite VSWR at rated VDD —
Application 880 MHz Single-Carrier N-CDMA Base Station PA Broadband RF power amplifier / large-signal common-source amplifier
Manufacturer Freescale Semiconductor (acquired by NXP) NXP Semiconductors (formerly Freescale / Motorola)
Part Family — RF Sub-Micron MOSFET Line
Configuration — Single, common-source
Typical Output Power — 30 W at 945 MHz
Operating Frequency Range — DC to 1000 MHz
Power Gain (typical) — 20 dB
Drain-Source Voltage (Vds) Rating — 26 V
Typical Bias Current — 250 mA
Gehäuse — TO-272-2 (ceramic, 2-lead flanged)
Maximum Dissipation (per Partstack) — 139 W
Feuchtigkeitsempfindlichkeitsgrad (MSL) — 3
Polarity / Channel Mode — N-Channel, enhancement-mode
RoHS-Status — [DATA_NEEDED: RoHS compliance status from manufacturer page]

Datenblätter & Ressourcen

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