MRF6S9045NR1 vs MRF9030MBR1 비교
다음의 상세 나란히 비교: MRF6S9045NR1 제조: NXP Semiconductors 및 MRF9030MBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6S9045NR1 | MRF9030MBR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $16.40 | $25.80 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral MOSFET (RF Power) | — |
| Drain-Source Voltage (VDS) Rated | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Continuous Drain Current (ID) | 10 uA (rated) | — |
| Quiescent Current (IDQ) | 350 mA | — |
| Output Power (Pout) | 10 W Avg. | — |
| Operating Frequency | 880 MHz (up to 1000 MHz) | — |
| Power Gain | 22.7 dB | — |
| Drain Efficiency | [DATA_NEEDED: typical efficiency percentage at Pout=10W] | — |
| 패키지 / 케이스 | TO-270-2 (Case 1265-09, Style 1) | — |
| 실장 유형 | Surface Mount | Surface Mount (flanged ceramic) |
| Lead-Free / RoHS | Yes (N suffix = lead-free terminations) | — |
| VSWR Ruggedness | Infinite VSWR at rated VDD | — |
| Application | 880 MHz Single-Carrier N-CDMA Base Station PA | Broadband RF power amplifier / large-signal common-source amplifier |
| Manufacturer | Freescale Semiconductor (acquired by NXP) | NXP Semiconductors (formerly Freescale / Motorola) |
| Part Family | — | RF Sub-Micron MOSFET Line |
| Configuration | — | Single, common-source |
| Typical Output Power | — | 30 W at 945 MHz |
| Operating Frequency Range | — | DC to 1000 MHz |
| Power Gain (typical) | — | 20 dB |
| Drain-Source Voltage (Vds) Rating | — | 26 V |
| Typical Bias Current | — | 250 mA |
| 패키지 | — | TO-272-2 (ceramic, 2-lead flanged) |
| Maximum Dissipation (per Partstack) | — | 139 W |
| 습도 민감도 레벨 (MSL) | — | 3 |
| Polarity / Channel Mode | — | N-Channel, enhancement-mode |
| RoHS 상태 | — | [DATA_NEEDED: RoHS compliance status from manufacturer page] |