MRF6S9045NR1 vs MRF9030MBR1 Comparação

Comparação detalhada lado a lado de MRF6S9045NR1 por NXP Semiconductors e MRF9030MBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Ativo
NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ Ativo

Comparação de especificações

Parâmetro MRF6S9045NR1 MRF9030MBR1
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $16,40 $25,80
Tipo de transistor LDMOS, N-Channel Enhancement-Mode N-Channel Enhancement-Mode Lateral MOSFET
Technology Lateral MOSFET (RF Power) —
Drain-Source Voltage (VDS) Rated 68 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Continuous Drain Current (ID) 10 uA (rated) —
Quiescent Current (IDQ) 350 mA —
Output Power (Pout) 10 W Avg. —
Operating Frequency 880 MHz (up to 1000 MHz) —
Power Gain 22.7 dB —
Drain Efficiency [DATA_NEEDED: typical efficiency percentage at Pout=10W] —
Encapsulamento / Caixa TO-270-2 (Case 1265-09, Style 1) —
Tipo de montagem Surface Mount Surface Mount (flanged ceramic)
Lead-Free / RoHS Yes (N suffix = lead-free terminations) —
VSWR Ruggedness Infinite VSWR at rated VDD —
Application 880 MHz Single-Carrier N-CDMA Base Station PA Broadband RF power amplifier / large-signal common-source amplifier
Manufacturer Freescale Semiconductor (acquired by NXP) NXP Semiconductors (formerly Freescale / Motorola)
Part Family — RF Sub-Micron MOSFET Line
Configuration — Single, common-source
Typical Output Power — 30 W at 945 MHz
Operating Frequency Range — DC to 1000 MHz
Power Gain (typical) — 20 dB
Drain-Source Voltage (Vds) Rating — 26 V
Typical Bias Current — 250 mA
Encapsulamento — TO-272-2 (ceramic, 2-lead flanged)
Maximum Dissipation (per Partstack) — 139 W
Nível de sensibilidade à umidade (MSL) — 3
Polarity / Channel Mode — N-Channel, enhancement-mode
Status RoHS — [DATA_NEEDED: RoHS compliance status from manufacturer page]

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