MRF6V3090NR1 vs MRF6V4300NBR5 Comparación
Comparación detallada lado a lado de MRF6V3090NR1 por NXP Semiconductors y MRF6V4300NBR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP
MRF6V4300NBR5 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6V3090NR1 | MRF6V4300NBR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $59,90 | $125,00 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | RF Power MOSFET, N-Channel Enhancement-Mode Lateral |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 350 mA | — |
| Frequency Range | 470 MHz to 1215 MHz | — |
| Test Frequency | 860 MHz | 450 MHz |
| Output Power (CW, Pout) | 90 W | — |
| Power Gain (typical) | 22 dB at 860 MHz | — |
| Drain Efficiency (typical) | [DATA_NEEDED: drain efficiency %] | — |
| VSWR Tolerance | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW | — |
| Input Power (Pin) | [DATA_NEEDED: input drive level for 90 W Pout] | — |
| Package Type | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) | — |
| Tipo de montaje | Surface Mount / Flange Mount with bolt-down heatsink | Surface Mount / Flange Mount with screws |
| Temperatura de unión de funcionamiento | -40C to +200C (max TJ) | — |
| Resistencia térmica | [DATA_NEEDED: theta_JC value C/W] | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] | [DATA_NEEDED: RoHS status] |
| Reel Quantity (R1 suffix) | 500 per reel (R1 = 500 unit reel) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vds) Maximum | — | 110 V |
| Continuous Drain Current (Id) | — | [DATA_NEEDED: continuous drain current rating] |
| Operating Frequency Range | — | 10 MHz to 600 MHz |
| Output Power (Pout) | — | 300 W CW |
| Power Gain (Gps) | — | 22 dB typical at 450 MHz, 50 V |
| Operating Drain Voltage (Vdd) Typical | — | 50 V |
| Power Dissipation (Pd) | — | [DATA_NEEDED: Pd maximum] |
| Noise Figure (NF) Typical | — | [DATA_NEEDED: noise figure typical] |
| Input Matching | — | Unmatched (external matching required) |
| VSWR Capability | — | 10:1 VSWR at all phase angles, 50 V, 860 MHz reference |
| Encapsulado | — | TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: junction/operating temperature] |
| Tape & Reel Packaging | — | Yes (suffix R5 indicates 250-unit reel) |