MRF6V3090NR1 vs MRF6V4300NBR5 Vergleich

Detaillierter Direktvergleich von MRF6V3090NR1 von NXP Semiconductors und MRF6V4300NBR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6V3090NR1 MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 ✓ Aktiv
NXP Semiconductors
MRF6V4300NBR5 MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6V3090NR1 MRF6V4300NBR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $59,90 $125,00
Transistortyp N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) RF Power MOSFET, N-Channel Enhancement-Mode Lateral
Technology LDMOS (Laterally Diffused MOSFET) —
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 350 mA —
Frequency Range 470 MHz to 1215 MHz —
Test Frequency 860 MHz 450 MHz
Output Power (CW, Pout) 90 W —
Power Gain (typical) 22 dB at 860 MHz —
Drain Efficiency (typical) [DATA_NEEDED: drain efficiency %] —
VSWR Tolerance 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW —
Input Power (Pin) [DATA_NEEDED: input drive level for 90 W Pout] —
Package Type TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) —
Montageart Surface Mount / Flange Mount with bolt-down heatsink Surface Mount / Flange Mount with screws
Betriebs-Sperrschichttemperatur -40C to +200C (max TJ) —
Wärmewiderstand [DATA_NEEDED: theta_JC value C/W] —
MSL-Level [DATA_NEEDED: MSL rating] —
RoHS-Status [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] [DATA_NEEDED: RoHS status]
Reel Quantity (R1 suffix) 500 per reel (R1 = 500 unit reel) —
Manufacturer — NXP Semiconductors (formerly Freescale)
Drain-Source Voltage (Vds) Maximum — 110 V
Continuous Drain Current (Id) — [DATA_NEEDED: continuous drain current rating]
Operating Frequency Range — 10 MHz to 600 MHz
Output Power (Pout) — 300 W CW
Power Gain (Gps) — 22 dB typical at 450 MHz, 50 V
Operating Drain Voltage (Vdd) Typical — 50 V
Power Dissipation (Pd) — [DATA_NEEDED: Pd maximum]
Noise Figure (NF) Typical — [DATA_NEEDED: noise figure typical]
Input Matching — Unmatched (external matching required)
VSWR Capability — 10:1 VSWR at all phase angles, 50 V, 860 MHz reference
Gehäuse — TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange)
Betriebstemperaturbereich — [DATA_NEEDED: junction/operating temperature]
Tape & Reel Packaging — Yes (suffix R5 indicates 250-unit reel)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern