MRF6V3090NR1 vs MRF6V4300NBR5 Comparação

Comparação detalhada lado a lado de MRF6V3090NR1 por NXP Semiconductors e MRF6V4300NBR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6V3090NR1 MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 ✓ Ativo
NXP Semiconductors
MRF6V4300NBR5 MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 ✓ Ativo

Comparação de especificações

Parâmetro MRF6V3090NR1 MRF6V4300NBR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $59,90 $125,00
Tipo de transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) RF Power MOSFET, N-Channel Enhancement-Mode Lateral
Technology LDMOS (Laterally Diffused MOSFET) —
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 350 mA —
Frequency Range 470 MHz to 1215 MHz —
Test Frequency 860 MHz 450 MHz
Output Power (CW, Pout) 90 W —
Power Gain (typical) 22 dB at 860 MHz —
Drain Efficiency (typical) [DATA_NEEDED: drain efficiency %] —
VSWR Tolerance 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW —
Input Power (Pin) [DATA_NEEDED: input drive level for 90 W Pout] —
Package Type TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) —
Tipo de montagem Surface Mount / Flange Mount with bolt-down heatsink Surface Mount / Flange Mount with screws
Temperatura de junção de operação -40C to +200C (max TJ) —
Resistência térmica [DATA_NEEDED: theta_JC value C/W] —
Nível MSL [DATA_NEEDED: MSL rating] —
Status RoHS [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] [DATA_NEEDED: RoHS status]
Reel Quantity (R1 suffix) 500 per reel (R1 = 500 unit reel) —
Manufacturer — NXP Semiconductors (formerly Freescale)
Drain-Source Voltage (Vds) Maximum — 110 V
Continuous Drain Current (Id) — [DATA_NEEDED: continuous drain current rating]
Operating Frequency Range — 10 MHz to 600 MHz
Output Power (Pout) — 300 W CW
Power Gain (Gps) — 22 dB typical at 450 MHz, 50 V
Operating Drain Voltage (Vdd) Typical — 50 V
Power Dissipation (Pd) — [DATA_NEEDED: Pd maximum]
Noise Figure (NF) Typical — [DATA_NEEDED: noise figure typical]
Input Matching — Unmatched (external matching required)
VSWR Capability — 10:1 VSWR at all phase angles, 50 V, 860 MHz reference
Encapsulamento — TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange)
Faixa de temperatura de operação — [DATA_NEEDED: junction/operating temperature]
Tape & Reel Packaging — Yes (suffix R5 indicates 250-unit reel)

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