MRF8P23160WHSR3 vs MRF8P26080HSR3 Comparación
Comparación detallada lado a lado de MRF8P23160WHSR3 por NXP Semiconductors y MRF8P26080HSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF8P23160WHSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Transceivers | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $99,10 | $99,85 |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) | — |
| Tipo de transistor | N-Channel LDMOS RF Power MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Mode | Enhancement Mode | — |
| Frequency Range | 2300 to 2400 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.32 GHz | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 65 V | — |
| Test Voltage (VDD) | 28 V | — |
| Power Gain | 14.1 dB | — |
| Average Output Power (P1dB / W-CDMA) | 30 W | — |
| Peak Output Power | 160 W | — |
| Quiescent Drain Current (IDQA) | 600 mA | — |
| Package Type | NI-780-4 (CASE 465M-01), ceramic flangeless | — |
| Number of Terminals | 4 | — |
| Estilo de montaje | Surface Mount (SMD flat lead) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40C to +150C (junction) |
| Technology | HV8 Lateral LDMOS | Gen8 LDMOS (Silicon, Lateral) |
| Configuration | Single (Doherty-ready) | — |
| Application | Base Station / Macro Cell Power Amplifier | — |
| Estado RoHS | Compliant | — |
| Nivel de sensibilidad a la humedad (MSL) | [DATA_NEEDED: MSL rating] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Encapsulado | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Tipo de montaje | — | Through-hole flange-mount with screw attachment |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |