MRF8P23160WHSR3 vs MRF8P26080HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8P23160WHSR3 par NXP Semiconductors et MRF8P26080HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF8P23160WHSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Transceivers | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $99,10 | $99,85 |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) | — |
| Type de transistor | N-Channel LDMOS RF Power MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Mode | Enhancement Mode | — |
| Frequency Range | 2300 to 2400 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.32 GHz | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 65 V | — |
| Test Voltage (VDD) | 28 V | — |
| Power Gain | 14.1 dB | — |
| Average Output Power (P1dB / W-CDMA) | 30 W | — |
| Peak Output Power | 160 W | — |
| Quiescent Drain Current (IDQA) | 600 mA | — |
| Package Type | NI-780-4 (CASE 465M-01), ceramic flangeless | — |
| Number of Terminals | 4 | — |
| Style de montage | Surface Mount (SMD flat lead) | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | -40C to +150C (junction) |
| Technology | HV8 Lateral LDMOS | Gen8 LDMOS (Silicon, Lateral) |
| Configuration | Single (Doherty-ready) | — |
| Application | Base Station / Macro Cell Power Amplifier | — |
| Statut RoHS | Compliant | — |
| Niveau de sensibilité à l'humidité (MSL) | [DATA_NEEDED: MSL rating] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Boîtier | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Type de montage | — | Through-hole flange-mount with screw attachment |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |