MRF8S19260HR6 vs MRF7S19120NR1 Comparación

Comparación detallada lado a lado de MRF8S19260HR6 por NXP Semiconductors y MRF7S19120NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF8S19260HR6 MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 ✓ Activo
NXP Semiconductors
MRF7S19120NR1 MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 ✓ Activo

Comparación de especificaciones

Parámetro MRF8S19260HR6 MRF7S19120NR1
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $96,40 $73,00
Tipo de transistor LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral
Technology Laterally Diffused Metal-Oxide Semiconductor (LDMOS) RF Power MOSFET (Gen7 HV8 LDMOS)
Frequency Range 1930 MHz to 1990 MHz 1930 MHz to 1990 MHz
Test Frequency 1.96 GHz (1960 MHz) —
Drain-Source Voltage (V(BR)DSS) Rated 65 V —
Operating Drain Voltage (Test) 30 V —
Test Bias Current 1.6 A —
Average Output Power (Pout) 74 W —
Power Gain (Gp) 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A —
Drain Efficiency [DATA_NEEDED: typical % at rated conditions] —
Application Class Class AB or Class C —
Modulation Support CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE —
Encapsulado NI-1230-8 (ceramic bolt-down, 2-lead flange) TO-270 WB-4 (overmolded plastic, 4-lead)
Tipo de montaje Chassis / heatsink mount (bolt-down flange) —
Lead-Free Status Yes —
Estado RoHS [DATA_NEEDED: confirm from NXP product page] —
Manufacturer Freescale Semiconductor (now NXP Semiconductors) —
Output Power (Avg, W-CDMA) — 36 W
Drain-Source Voltage (Vds max) — 65 V (rated)
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 1.2 A
Power Gain (typ) — 18 dB at 1.99 GHz
Operating Class — Class AB, Class C
Estilo de montaje — Surface Mount / Flange Mount
Número de pines — 5 (per Freescale/NXP datasheet)
Lead Free Status — Lead Free per datasheet
Target Modulation — W-CDMA, CDMA, multi-carrier GSM
Application — CDMA / W-CDMA base station final-stage PA

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