MRF8S19260HR6 vs MRF7S19120NR1 对比
详细并排对比 MRF8S19260HR6 出自 NXP Semiconductors 和 MRF7S19120NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF8S19260HR6 | MRF7S19120NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $96.40 | $73.00 |
| 晶体管类型 | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral |
| Technology | Laterally Diffused Metal-Oxide Semiconductor (LDMOS) | RF Power MOSFET (Gen7 HV8 LDMOS) |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Test Frequency | 1.96 GHz (1960 MHz) | — |
| Drain-Source Voltage (V(BR)DSS) Rated | 65 V | — |
| Operating Drain Voltage (Test) | 30 V | — |
| Test Bias Current | 1.6 A | — |
| Average Output Power (Pout) | 74 W | — |
| Power Gain (Gp) | 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A | — |
| Drain Efficiency | [DATA_NEEDED: typical % at rated conditions] | — |
| Application Class | Class AB or Class C | — |
| Modulation Support | CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE | — |
| 封装 | NI-1230-8 (ceramic bolt-down, 2-lead flange) | TO-270 WB-4 (overmolded plastic, 4-lead) |
| 安装类型 | Chassis / heatsink mount (bolt-down flange) | — |
| Lead-Free Status | Yes | — |
| RoHS 状态 | [DATA_NEEDED: confirm from NXP product page] | — |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | — |
| Output Power (Avg, W-CDMA) | — | 36 W |
| Drain-Source Voltage (Vds max) | — | 65 V (rated) |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 1.2 A |
| Power Gain (typ) | — | 18 dB at 1.99 GHz |
| Operating Class | — | Class AB, Class C |
| 安装方式 | — | Surface Mount / Flange Mount |
| 引脚数 | — | 5 (per Freescale/NXP datasheet) |
| Lead Free Status | — | Lead Free per datasheet |
| Target Modulation | — | W-CDMA, CDMA, multi-carrier GSM |
| Application | — | CDMA / W-CDMA base station final-stage PA |