MRF8S19260HR6 vs MRF7S19120NR1 Comparação

Comparação detalhada lado a lado de MRF8S19260HR6 por NXP Semiconductors e MRF7S19120NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF8S19260HR6 MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 ✓ Ativo
NXP Semiconductors
MRF7S19120NR1 MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 ✓ Ativo

Comparação de especificações

Parâmetro MRF8S19260HR6 MRF7S19120NR1
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $96,40 $73,00
Tipo de transistor LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral
Technology Laterally Diffused Metal-Oxide Semiconductor (LDMOS) RF Power MOSFET (Gen7 HV8 LDMOS)
Frequency Range 1930 MHz to 1990 MHz 1930 MHz to 1990 MHz
Test Frequency 1.96 GHz (1960 MHz) —
Drain-Source Voltage (V(BR)DSS) Rated 65 V —
Operating Drain Voltage (Test) 30 V —
Test Bias Current 1.6 A —
Average Output Power (Pout) 74 W —
Power Gain (Gp) 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A —
Drain Efficiency [DATA_NEEDED: typical % at rated conditions] —
Application Class Class AB or Class C —
Modulation Support CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE —
Encapsulamento NI-1230-8 (ceramic bolt-down, 2-lead flange) TO-270 WB-4 (overmolded plastic, 4-lead)
Tipo de montagem Chassis / heatsink mount (bolt-down flange) —
Lead-Free Status Yes —
Status RoHS [DATA_NEEDED: confirm from NXP product page] —
Manufacturer Freescale Semiconductor (now NXP Semiconductors) —
Output Power (Avg, W-CDMA) — 36 W
Drain-Source Voltage (Vds max) — 65 V (rated)
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 1.2 A
Power Gain (typ) — 18 dB at 1.99 GHz
Operating Class — Class AB, Class C
Estilo de montagem — Surface Mount / Flange Mount
Número de pinos — 5 (per Freescale/NXP datasheet)
Lead Free Status — Lead Free per datasheet
Target Modulation — W-CDMA, CDMA, multi-carrier GSM
Application — CDMA / W-CDMA base station final-stage PA

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