MRFG35010NT1 vs MRFG35010AR5 Comparación

Comparación detallada lado a lado de MRFG35010NT1 por NXP Semiconductors y MRFG35010AR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete
NXP Semiconductors
MRFG35010AR5 MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 ✓ Activo

Comparación de especificaciones

Parámetro MRFG35010NT1 MRFG35010AR5
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs Transistors
Estado del ciclo de vida Obsolete Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $25,95 $38,40
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRFG35010NT1 —
Tipo de transistor GaAs pHEMT RF Power FET pHEMT GaAs RF Power FET (N-Channel)
Drain-Source Voltage Rating (Vds) 15 V —
Continuous Drain Current Rating 2.9 A —
Operating Frequency 3.55 GHz —
Frequency Range 1.8 GHz to 3.6 GHz —
Test Voltage 12 V —
Test Current (quiescent) 180 mA —
Associated Power Gain 10 dB at 3.55 GHz —
Output Power 9 W at 3.55 GHz —
Configuration Unmatched, common source Single N-channel die
Class of Operation Class AB linear —
Encapsulado / Carcasa PLD-1.5 flanged ceramic —
Supplier Device Package PLD-1.5 —
Tipo de montaje Chassis-mount / flange-bolt Surface Mount (with bolted heatsink)
Lead Free Status Lead free (per datasheet) —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: rohs status]
Frequency — 3.55 GHz (typical), 3.4-3.8 GHz band
Drain Voltage (Vds) Rated — 15 V
Drain Current Rating — 2.9 A (pulsed)
Quiescent Drain Current (Idq) — 140 mA
Output Power (Pout) — 1 W (CW)
Power Gain — 10 dB (typical at 3.55 GHz)
Technology — GaAs pseudomorphic HEMT
Encapsulado — NI-360HF (ceramic flange, surface mount)
Operating Mode — Class AB (typical RF PA)
Nivel MSL — [DATA_NEEDED: MSL rating]

Hojas de datos y recursos

Examinar todos los productos Crear BOM Solicitar cotización