MRFG35010NT1 vs MRFG35010AR5 对比
详细并排对比 MRFG35010NT1 出自 NXP Semiconductors 和 MRFG35010AR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRFG35010NT1 | MRFG35010AR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | Transistors |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $25.95 | $38.40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFG35010NT1 | — |
| 晶体管类型 | GaAs pHEMT RF Power FET | pHEMT GaAs RF Power FET (N-Channel) |
| Drain-Source Voltage Rating (Vds) | 15 V | — |
| Continuous Drain Current Rating | 2.9 A | — |
| Operating Frequency | 3.55 GHz | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | — |
| Test Voltage | 12 V | — |
| Test Current (quiescent) | 180 mA | — |
| Associated Power Gain | 10 dB at 3.55 GHz | — |
| Output Power | 9 W at 3.55 GHz | — |
| Configuration | Unmatched, common source | Single N-channel die |
| Class of Operation | Class AB linear | — |
| 封装 / 外壳 | PLD-1.5 flanged ceramic | — |
| Supplier Device Package | PLD-1.5 | — |
| 安装类型 | Chassis-mount / flange-bolt | Surface Mount (with bolted heatsink) |
| Lead Free Status | Lead free (per datasheet) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| Frequency | — | 3.55 GHz (typical), 3.4-3.8 GHz band |
| Drain Voltage (Vds) Rated | — | 15 V |
| Drain Current Rating | — | 2.9 A (pulsed) |
| Quiescent Drain Current (Idq) | — | 140 mA |
| Output Power (Pout) | — | 1 W (CW) |
| Power Gain | — | 10 dB (typical at 3.55 GHz) |
| Technology | — | GaAs pseudomorphic HEMT |
| 封装 | — | NI-360HF (ceramic flange, surface mount) |
| Operating Mode | — | Class AB (typical RF PA) |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |