MRFG35010NT1 vs MRFG35010AR5 Comparação

Comparação detalhada lado a lado de MRFG35010NT1 por NXP Semiconductors e MRFG35010AR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete
NXP Semiconductors
MRFG35010AR5 MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 ✓ Ativo

Comparação de especificações

Parâmetro MRFG35010NT1 MRFG35010AR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs Transistors
Status do ciclo de vida Obsolete Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $25,95 $38,40
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRFG35010NT1 —
Tipo de transistor GaAs pHEMT RF Power FET pHEMT GaAs RF Power FET (N-Channel)
Drain-Source Voltage Rating (Vds) 15 V —
Continuous Drain Current Rating 2.9 A —
Operating Frequency 3.55 GHz —
Frequency Range 1.8 GHz to 3.6 GHz —
Test Voltage 12 V —
Test Current (quiescent) 180 mA —
Associated Power Gain 10 dB at 3.55 GHz —
Output Power 9 W at 3.55 GHz —
Configuration Unmatched, common source Single N-channel die
Class of Operation Class AB linear —
Encapsulamento / Caixa PLD-1.5 flanged ceramic —
Supplier Device Package PLD-1.5 —
Tipo de montagem Chassis-mount / flange-bolt Surface Mount (with bolted heatsink)
Lead Free Status Lead free (per datasheet) —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: rohs status]
Frequency — 3.55 GHz (typical), 3.4-3.8 GHz band
Drain Voltage (Vds) Rated — 15 V
Drain Current Rating — 2.9 A (pulsed)
Quiescent Drain Current (Idq) — 140 mA
Output Power (Pout) — 1 W (CW)
Power Gain — 10 dB (typical at 3.55 GHz)
Technology — GaAs pseudomorphic HEMT
Encapsulamento — NI-360HF (ceramic flange, surface mount)
Operating Mode — Class AB (typical RF PA)
Nível MSL — [DATA_NEEDED: MSL rating]

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