MT40A512M8RH-075E:B vs MT40A512M8RH-083E Comparación
Comparación detallada lado a lado de MT40A512M8RH-075E:B por Micron Technology y MT40A512M8RH-083E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ ActivoComparación de especificaciones
| Parámetro | MT40A512M8RH-075E:B | MT40A512M8RH-083E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,15 | $3,30 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organización de memoria | 512M x 8 | 512M x 8 |
| Velocidad de datos | 2666 MT/s (DDR4-2666) | — |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| Tipo de interfaz | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | 1.2 V pseudo open-drain |
| Tensión de referencia | On-die internal adjustable VREFDQ generation | — |
| Encapsulado | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA (9 x 10.5 mm) |
| Tipo de montaje | Surface Mount | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range (standard grade)] | 0C to +95C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | 64 ms, 8192-cycle refresh (to 95C) |
| Speed Grade Suffix | -075E | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Industry Speed Grade | — | DDR4-2400 |
| Clock Rate | — | 1.2 GHz |
| Internal Banks | — | 8 banks (2 groups of 4) |
| Prefetch | — | 8n-bit |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| VREFDQ | — | On-die internal, adjustable generation |
| FBGA Code | — | D9TGG |
| Marking Code | — | D9TGG |
| Data Strobe Preamble | — | Programmable |
| Latencia CAS | — | [DATA_NEEDED: CAS latency per speed bin table] |