MT40A512M8RH-075E:B vs MT40A512M8RH-083E 对比
详细并排对比 MT40A512M8RH-075E:B 出自 Micron Technology 和 MT40A512M8RH-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M8RH-075E:B | MT40A512M8RH-083E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.15 | $3.30 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2666 MT/s (DDR4-2666) | — |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| 接口类型 | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | 1.2 V pseudo open-drain |
| 基准电压 | On-die internal adjustable VREFDQ generation | — |
| 封装 | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA (9 x 10.5 mm) |
| 安装类型 | Surface Mount | — |
| 工作温度 | [DATA_NEEDED: operating temperature range (standard grade)] | 0C to +95C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | 64 ms, 8192-cycle refresh (to 95C) |
| Speed Grade Suffix | -075E | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Industry Speed Grade | — | DDR4-2400 |
| Clock Rate | — | 1.2 GHz |
| Internal Banks | — | 8 banks (2 groups of 4) |
| Prefetch | — | 8n-bit |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| VREFDQ | — | On-die internal, adjustable generation |
| FBGA Code | — | D9TGG |
| Marking Code | — | D9TGG |
| Data Strobe Preamble | — | Programmable |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency per speed bin table] |