MW4IC001NR4 vs MW4IC001MR4 Comparación
Comparación detallada lado a lado de MW4IC001NR4 por NXP Semiconductors y MW4IC001MR4 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP
MW4IC001NR4 ⚠ Última compraNXP Semiconductors
MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP
MW4IC001MR4 ⚠ Última compraComparación de especificaciones
| Parámetro | MW4IC001NR4 | MW4IC001MR4 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Última compra | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $7,95 | $10,75 |
| Manufacturer | NXP Semiconductors (originally Freescale Semiconductor) | — |
| Part Number | MW4IC001NR4 | — |
| RF Type | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Función | Wideband integrated power amplifier / APD feedback amplifier | — |
| Frequency Range | 800 MHz to 2170 MHz | 800 MHz to 2170 MHz |
| Gain (small-signal) | 13 dB | — |
| Output Power (P1dB) | 900 mW (approx. 29.5 dBm) | — |
| Tensión de alimentación | 26 V (typ.) / 28 V (rated) | — |
| Supply Current (quiescent) | 12 mA (typ.) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | LDMOS (Laterally Diffused MOS) |
| Input / Output Impedance | Internally matched to 50 ohm | 50 ohm (nominal) |
| Encapsulado / Carcasa | PLD-1.5 (over-molded plastic flange-mount) | — |
| Packaging | Tape & Reel (R4 suffix = 500 pcs/reel standard) | — |
| Temperatura de funcionamiento | -40 C to +85 C ambient | — |
| Termination Finish | Lead-free (matte tin) | — |
| Estado RoHS | Compliant (N-suffix = lead-free transition marking) | Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free) |
| Output Power (CW, P1dB typical) | — | 900 mW (29.5 dBm) |
| Power Gain at 2170 MHz | — | 13 dB |
| Drain Efficiency at 2170 MHz | — | 38 % |
| Drain Supply Voltage (VDD) | — | 28 V (typ) |
| Quiescent Current (IDQ) | — | 12 mA |
| Supported Air Interfaces | — | GSM, TDMA, CDMA, EDGE, W-CDMA |
| Operating Case Temperature | — | -40C to +85C |
| Encapsulado | — | PLD-1.5 (RF1649-4, over-molded plastic) |
| Tipo de montaje | — | Surface Mount |
| Terminal Finish | — | Tin/Lead (Sn/Pb) |
| Application Role | — | Analog predistortion (DPD) reference amplifier |