MW4IC001NR4 vs MW4IC001MR4 对比

详细并排对比 MW4IC001NR4 出自 NXP Semiconductors 和 MW4IC001MR4 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MW4IC001NR4 MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP

MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP

MW4IC001NR4 ⚠ 最后一次采购
NXP Semiconductors
MW4IC001MR4 MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP

MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP

MW4IC001MR4 ⚠ 最后一次采购

规格对比

参数 MW4IC001NR4 MW4IC001MR4
品牌 NXP Semiconductors NXP Semiconductors
分类 RF Amplifiers RF Amplifiers
生命周期状态 最后采购期 最后采购期
库存状态 有库存 有库存
单价(USD) $7.95 $10.75
Manufacturer NXP Semiconductors (originally Freescale Semiconductor) —
Part Number MW4IC001NR4 —
RF Type Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA —
功能 Wideband integrated power amplifier / APD feedback amplifier —
Frequency Range 800 MHz to 2170 MHz 800 MHz to 2170 MHz
Gain (small-signal) 13 dB —
Output Power (P1dB) 900 mW (approx. 29.5 dBm) —
电源电压 26 V (typ.) / 28 V (rated) —
Supply Current (quiescent) 12 mA (typ.) —
Technology RF LDMOS (Laterally Diffused MOSFET) LDMOS (Laterally Diffused MOS)
Input / Output Impedance Internally matched to 50 ohm 50 ohm (nominal)
封装 / 外壳 PLD-1.5 (over-molded plastic flange-mount) —
Packaging Tape & Reel (R4 suffix = 500 pcs/reel standard) —
工作温度 -40 C to +85 C ambient —
Termination Finish Lead-free (matte tin) —
RoHS 状态 Compliant (N-suffix = lead-free transition marking) Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free)
Output Power (CW, P1dB typical) — 900 mW (29.5 dBm)
Power Gain at 2170 MHz — 13 dB
Drain Efficiency at 2170 MHz — 38 %
Drain Supply Voltage (VDD) — 28 V (typ)
Quiescent Current (IDQ) — 12 mA
Supported Air Interfaces — GSM, TDMA, CDMA, EDGE, W-CDMA
Operating Case Temperature — -40C to +85C
封装 — PLD-1.5 (RF1649-4, over-molded plastic)
安装类型 — Surface Mount
Terminal Finish — Tin/Lead (Sn/Pb)
Application Role — Analog predistortion (DPD) reference amplifier

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