MW4IC001NR4 vs MW4IC001MR4 Comparaison
Comparaison détaillée côte à côte de MW4IC001NR4 par NXP Semiconductors et MW4IC001MR4 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP
MW4IC001NR4 ⚠ Dernier achatNXP Semiconductors
MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP
MW4IC001MR4 ⚠ Dernier achatComparaison des spécifications
| Paramètre | MW4IC001NR4 | MW4IC001MR4 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Dernier achat | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $7,95 | $10,75 |
| Manufacturer | NXP Semiconductors (originally Freescale Semiconductor) | — |
| Part Number | MW4IC001NR4 | — |
| RF Type | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Fonction | Wideband integrated power amplifier / APD feedback amplifier | — |
| Frequency Range | 800 MHz to 2170 MHz | 800 MHz to 2170 MHz |
| Gain (small-signal) | 13 dB | — |
| Output Power (P1dB) | 900 mW (approx. 29.5 dBm) | — |
| Tension d'alimentation | 26 V (typ.) / 28 V (rated) | — |
| Supply Current (quiescent) | 12 mA (typ.) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | LDMOS (Laterally Diffused MOS) |
| Input / Output Impedance | Internally matched to 50 ohm | 50 ohm (nominal) |
| Boîtier / Format | PLD-1.5 (over-molded plastic flange-mount) | — |
| Packaging | Tape & Reel (R4 suffix = 500 pcs/reel standard) | — |
| Température de fonctionnement | -40 C to +85 C ambient | — |
| Termination Finish | Lead-free (matte tin) | — |
| Statut RoHS | Compliant (N-suffix = lead-free transition marking) | Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free) |
| Output Power (CW, P1dB typical) | — | 900 mW (29.5 dBm) |
| Power Gain at 2170 MHz | — | 13 dB |
| Drain Efficiency at 2170 MHz | — | 38 % |
| Drain Supply Voltage (VDD) | — | 28 V (typ) |
| Quiescent Current (IDQ) | — | 12 mA |
| Supported Air Interfaces | — | GSM, TDMA, CDMA, EDGE, W-CDMA |
| Operating Case Temperature | — | -40C to +85C |
| Boîtier | — | PLD-1.5 (RF1649-4, over-molded plastic) |
| Type de montage | — | Surface Mount |
| Terminal Finish | — | Tin/Lead (Sn/Pb) |
| Application Role | — | Analog predistortion (DPD) reference amplifier |