MW6IC2240NBR1 vs MW7IC2240NBR1 Comparación

Comparación detallada lado a lado de MW6IC2240NBR1 por NXP Semiconductors y MW7IC2240NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MW6IC2240NBR1 MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP

MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP

MW6IC2240NBR1 Obsolete
NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete

Comparación de especificaciones

Parámetro MW6IC2240NBR1 MW7IC2240NBR1
Marca NXP Semiconductors NXP Semiconductors
Categoría RF Amplifiers RF Amplifiers
Estado del ciclo de vida Obsolete Obsolete
Estado del stock In Stock In Stock
Precio unitario (USD) $19,80 $29,00
Technology RF LDMOS (Laterally Diffused MOSFET) RF LDMOS (multi-stage integrated)
RF Type Cellular, W-CDMA, TD-SCDMA driver amplifier —
Frequency Range 2110 MHz to 2170 MHz 2110 MHz to 2170 MHz (usable 2000-2200 MHz)
Supply Voltage (Operating) 26 V to 32 V (typical 28 V) —
Average Output Power (2-carrier W-CDMA) 4.5 W (typ) —
Power Gain 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm) —
Drain Current (operating, Pout=25 dBm avg) 210 mA (typ) —
Quiescent Current Stage 1 (IDQ1) 300 mA 90 mA
Quiescent Current Stage 2 (IDQ2) 320 mA 420 mA
IM3 (10 MHz offset, 2-carrier W-CDMA) -59 dBc (typ) —
ACPR (5 MHz offset, 2-carrier W-CDMA) -62 dBc (typ) —
VSWR Tolerance 3:1 at 28 Vdc, 2170 MHz, 20 W CW —
Encapsulado TO-272 WB-16 (over-molded plastic, 16-lead wideband) TO-272 WB-16 (over-molded plastic, 16-lead)
Number of Stages 2 (cascaded, integrated) —
Input / Output Matching On-chip, 50 ohm single-ended —
Operating Case Temperature [DATA_NEEDED: operating case temperature range] —
Estado RoHS Compliant [DATA_NEEDED: RoHS compliance]
Modulation / RF Type — W-CDMA (also TD-SCDMA, LTE)
Output Power (Average) — 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA
Supply Voltage (VDD) — 28 V (rated 24 V to 32 V operation)
Minimum Gain — 15 dB (typical 30 dB)
Input VSWR — 5:1
Output VSWR — 5:1
Nominal Impedance — 50 ohm (on-chip matched)
P1dB (Output) — 46 dBm (per distributor listing)
Tipo de montaje — Surface Mount
Terminal Finish — Matte Tin (Sn)
Package Body Material — Plastic / Epoxy
Operating Mode — 100% PAR tested for W-CDMA-like signals

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