MW6IC2240NBR1 vs MW7IC2240NBR1 Comparaison
Comparaison détaillée côte à côte de MW6IC2240NBR1 par NXP Semiconductors et MW7IC2240NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP
MW6IC2240NBR1 Obsolete
Comparaison des spécifications
| Paramètre | MW6IC2240NBR1 | MW7IC2240NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $19,80 | $29,00 |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | RF LDMOS (multi-stage integrated) |
| RF Type | Cellular, W-CDMA, TD-SCDMA driver amplifier | — |
| Frequency Range | 2110 MHz to 2170 MHz | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) |
| Supply Voltage (Operating) | 26 V to 32 V (typical 28 V) | — |
| Average Output Power (2-carrier W-CDMA) | 4.5 W (typ) | — |
| Power Gain | 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm) | — |
| Drain Current (operating, Pout=25 dBm avg) | 210 mA (typ) | — |
| Quiescent Current Stage 1 (IDQ1) | 300 mA | 90 mA |
| Quiescent Current Stage 2 (IDQ2) | 320 mA | 420 mA |
| IM3 (10 MHz offset, 2-carrier W-CDMA) | -59 dBc (typ) | — |
| ACPR (5 MHz offset, 2-carrier W-CDMA) | -62 dBc (typ) | — |
| VSWR Tolerance | 3:1 at 28 Vdc, 2170 MHz, 20 W CW | — |
| Boîtier | TO-272 WB-16 (over-molded plastic, 16-lead wideband) | TO-272 WB-16 (over-molded plastic, 16-lead) |
| Number of Stages | 2 (cascaded, integrated) | — |
| Input / Output Matching | On-chip, 50 ohm single-ended | — |
| Operating Case Temperature | [DATA_NEEDED: operating case temperature range] | — |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS compliance] |
| Modulation / RF Type | — | W-CDMA (also TD-SCDMA, LTE) |
| Output Power (Average) | — | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA |
| Supply Voltage (VDD) | — | 28 V (rated 24 V to 32 V operation) |
| Minimum Gain | — | 15 dB (typical 30 dB) |
| Input VSWR | — | 5:1 |
| Output VSWR | — | 5:1 |
| Nominal Impedance | — | 50 ohm (on-chip matched) |
| P1dB (Output) | — | 46 dBm (per distributor listing) |
| Type de montage | — | Surface Mount |
| Terminal Finish | — | Matte Tin (Sn) |
| Package Body Material | — | Plastic / Epoxy |
| Operating Mode | — | 100% PAR tested for W-CDMA-like signals |