NT5AD512M16C4-JRU vs MT40A512M16JY-083E Comparación
Comparación detallada lado a lado de NT5AD512M16C4-JRU por Nanya Technology y MT40A512M16JY-083E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ ActivoMicron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ ActivoComparación de especificaciones
| Parámetro | NT5AD512M16C4-JRU | MT40A512M16JY-083E |
|---|---|---|
| Marca | Nanya Technology | Micron Technology |
| Categoría | DRAM | DRAM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $83,00 | $5,85 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM (Automotive) |
| Density | 8 Gbit | 8 Gbit |
| Organización de memoria | 512M x 16 | 512M x 16 |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | 1.2 GHz (tCK = 0.83 ns) |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Encapsulado | 96-ball FBGA (PBGA96) | 96-FBGA (8 x 14 mm) |
| Temperatura de funcionamiento | -40 C to +95 C (industrial grade) | — |
| Interfaz | CMOS, DDR4 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Green Product (per Nanya product page) | — |
| Velocidad de datos | — | 2400 MT/s (speed grade -083E) |
| VDD Supply Voltage | — | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/- 60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV, +250 mV |
| I/O Interface | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal adjustable generation |
| Refresh Structure | — | 8192-cycle refresh |
| Refresh Window | — | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C |
| ECCN | — | EAR99 |
| Sin halógenos | — | Compliant |
| Country of Origin | — | China |