NT5AD512M16C4-JRU vs MT40A512M16JY-083E 对比
详细并排对比 NT5AD512M16C4-JRU 出自 Nanya Technology 和 MT40A512M16JY-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 量产中Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ 量产中规格对比
| 参数 | NT5AD512M16C4-JRU | MT40A512M16JY-083E |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 分类 | DRAM | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $83.00 | $5.85 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (Automotive) |
| Density | 8 Gbit | 8 Gbit |
| 存储组织 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | 1.2 GHz (tCK = 0.83 ns) |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封装 | 96-ball FBGA (PBGA96) | 96-FBGA (8 x 14 mm) |
| 工作温度 | -40 C to +95 C (industrial grade) | — |
| 接口 | CMOS, DDR4 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Green Product (per Nanya product page) | — |
| 数据速率 | — | 2400 MT/s (speed grade -083E) |
| VDD Supply Voltage | — | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/- 60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV, +250 mV |
| I/O Interface | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal adjustable generation |
| Refresh Structure | — | 8192-cycle refresh |
| Refresh Window | — | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C |
| ECCN | — | EAR99 |
| 无卤 | — | Compliant |
| Country of Origin | — | China |