SI1563DH-T1-E3 vs SI1553DL-T1-E3 Comparación
Comparación detallada lado a lado de SI1563DH-T1-E3 por Vishay Intertechnology y SI1553DL-T1-E3 por Vishay Intertechnology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Vishay Intertechnology
SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay
SI1563DH-T1-E3 ✓ ActivoVishay Intertechnology
SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay
SI1553DL-T1-E3 ✓ ActivoComparación de especificaciones
| Parámetro | SI1563DH-T1-E3 | SI1553DL-T1-E3 |
|---|---|---|
| Marca | Vishay Intertechnology | Vishay Intertechnology |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,29 | $0,22 |
| Configuration | Complementary N/P-Channel MOSFET array | N-Channel + P-Channel (Complementary Pair) |
| Drain-Source Voltage (VDS) | 20 V (N-channel and P-channel) | 20 V |
| N-Channel Continuous Drain Current (ID) | 1.13 A | — |
| P-Channel Continuous Drain Current (ID) | 880 mA | — |
| Total Device Power Dissipation (PD) | 570 mW | — |
| Gate Threshold Type | Low-threshold (logic-level compatible) | — |
| Encapsulado | SC-70-6 (SOT-363), 6 pins | SC-70-6 (SOT-363 / SC-88) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | TrenchFET (Vishay Gen III) | TrenchFET |
| Polarity | N-channel + P-channel (complementary pair) | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55 °C to +150 °C |
| Lead-Free | Yes (per Vishay ordering info) | — |
| Sin halógenos | Per ordering option Si1563DH-T1-GE3 | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Estado RoHS | Compliant | Compliant (RoHS Directive 2002/95/EC) |
| Manufacturer | — | Vishay Siliconix |
| Gate-Source Voltage (VGS) | — | ±8 V |
| Continuous Drain Current N-Ch (ID) | — | 660 mA |
| Continuous Drain Current P-Ch (ID) | — | 410 mA |
| On-Resistance N-Ch (RDS(on)) | — | 5 Ω typical @ VGS = 2.5 V |
| On-Resistance P-Ch (RDS(on)) | — | [DATA_NEEDED: RDS(on) P-channel] |
| Gate Threshold Voltage (VGS(th)) | — | 0.9 V typical |
| Total Power Dissipation | — | 270 mW |
| Halogen-Free Option | — | Yes (per IEC 61249-2-21) |
| Lead (Pb) Content | — | Lead-free (E3 suffix) |