SI1563DH-T1-E3 vs SI1553DL-T1-E3 비교

다음의 상세 나란히 비교: SI1563DH-T1-E3 제조: Vishay Intertechnology 및 SI1553DL-T1-E3 제조: Vishay Intertechnology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Vishay Intertechnology
SI1563DH-T1-E3 SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay

SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay

SI1563DH-T1-E3 ✓ 활성
Vishay Intertechnology
SI1553DL-T1-E3 SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay

SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay

SI1553DL-T1-E3 ✓ 활성

사양 비교

파라미터 SI1563DH-T1-E3 SI1553DL-T1-E3
브랜드 Vishay Intertechnology Vishay Intertechnology
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.29 $0.22
Configuration Complementary N/P-Channel MOSFET array N-Channel + P-Channel (Complementary Pair)
Drain-Source Voltage (VDS) 20 V (N-channel and P-channel) 20 V
N-Channel Continuous Drain Current (ID) 1.13 A —
P-Channel Continuous Drain Current (ID) 880 mA —
Total Device Power Dissipation (PD) 570 mW —
Gate Threshold Type Low-threshold (logic-level compatible) —
패키지 SC-70-6 (SOT-363), 6 pins SC-70-6 (SOT-363 / SC-88)
실장 유형 Surface Mount Surface Mount
Technology TrenchFET (Vishay Gen III) TrenchFET
Polarity N-channel + P-channel (complementary pair) —
동작 온도 범위 -55C to +150C (junction) -55 °C to +150 °C
Lead-Free Yes (per Vishay ordering info) —
할로겐 프리 Per ordering option Si1563DH-T1-GE3 —
MSL 레벨 [DATA_NEEDED: MSL level] —
RoHS 상태 Compliant Compliant (RoHS Directive 2002/95/EC)
Manufacturer — Vishay Siliconix
Gate-Source Voltage (VGS) — ±8 V
Continuous Drain Current N-Ch (ID) — 660 mA
Continuous Drain Current P-Ch (ID) — 410 mA
On-Resistance N-Ch (RDS(on)) — 5 Ω typical @ VGS = 2.5 V
On-Resistance P-Ch (RDS(on)) — [DATA_NEEDED: RDS(on) P-channel]
Gate Threshold Voltage (VGS(th)) — 0.9 V typical
Total Power Dissipation — 270 mW
Halogen-Free Option — Yes (per IEC 61249-2-21)
Lead (Pb) Content — Lead-free (E3 suffix)

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