STS5DNF60L vs STS4DNF60L Comparación
Comparación detallada lado a lado de STS5DNF60L por STMicroelectronics y STS4DNF60L por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ ActivoComparación de especificaciones
| Parámetro | STS5DNF60L | STS4DNF60L |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,54 |
| Drain-to-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D) at 25 °C | 5 A per channel | — |
| On-Resistance R_DS(on) (typ.) | 35 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) (max) | 45 mΩ at V_GS = 10 V, I_D = 2 A | < 0.055 Ω |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) value] | — |
| Gate Charge Q_g | [DATA_NEEDED: Q_g total gate charge value] | — |
| Technology | STripFET II trench N-channel | STripFET (strip-based, 2nd generation) |
| Configuration | Dual independent N-channel | — |
| Encapsulado | SO-8 (8-SOIC, surface mount) | SO-8 (8-pin, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Power Dissipation P_D (per datasheet) | 2 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature min/max] | -55 °C to +175 °C (junction) |
| Automotive Grade | Automotive-grade qualified | — |
| RoHS Compliance | Compliant | — |
| Avalanche Rating | 100% avalanche tested | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 per JEDEC J-STD-020 |
| Tipo de transistor | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D) | — | 4 A per channel |
| On-Resistance R_DS(on) (typ) | — | 0.045 Ω at V_GS = 10 V |
| Total Power Dissipation (P_tot) | — | 2 W |
| Gate-Source Threshold Voltage | — | [DATA_NEEDED: V_GS(th) minimum/typical/maximum] |
| Gate Drive | — | Low threshold drive (logic-level compatible) |
| Number of Channels | — | 2 (dual N-channel on one die) |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Manufacturing Process | — | STripFET "Single Feature Size" strip-based process |