STS5DNF60L vs STS4DNF60L 비교

다음의 상세 나란히 비교: STS5DNF60L 제조: STMicroelectronics 및 STS4DNF60L 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

STMicroelectronics
STS4DNF60L STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST

STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST

STS4DNF60L ✓ 활성

사양 비교

파라미터 STS5DNF60L STS4DNF60L
브랜드 STMicroelectronics STMicroelectronics
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.48 $0.54
Drain-to-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D) at 25 °C 5 A per channel —
On-Resistance R_DS(on) (typ.) 35 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) (max) 45 mΩ at V_GS = 10 V, I_D = 2 A < 0.055 Ω
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) value] —
Gate Charge Q_g [DATA_NEEDED: Q_g total gate charge value] —
Technology STripFET II trench N-channel STripFET (strip-based, 2nd generation)
Configuration Dual independent N-channel —
패키지 SO-8 (8-SOIC, surface mount) SO-8 (8-pin, surface mount)
실장 유형 Surface Mount Surface Mount
Power Dissipation P_D (per datasheet) 2 W —
동작 온도 범위 [DATA_NEEDED: operating temperature min/max] -55 °C to +175 °C (junction)
Automotive Grade Automotive-grade qualified —
RoHS Compliance Compliant —
Avalanche Rating 100% avalanche tested —
MSL 레벨 [DATA_NEEDED: MSL rating] 1 per JEDEC J-STD-020
트랜지스터 유형 — Dual N-Channel MOSFET Array
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D) — 4 A per channel
On-Resistance R_DS(on) (typ) — 0.045 Ω at V_GS = 10 V
Total Power Dissipation (P_tot) — 2 W
Gate-Source Threshold Voltage — [DATA_NEEDED: V_GS(th) minimum/typical/maximum]
Gate Drive — Low threshold drive (logic-level compatible)
Number of Channels — 2 (dual N-channel on one die)
RoHS 상태 — Compliant
Lead-Free — Yes
Manufacturing Process — STripFET "Single Feature Size" strip-based process

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