STS5DNF60L vs STS4DNF60L Comparaison
Comparaison détaillée côte à côte de STS5DNF60L par STMicroelectronics et STS4DNF60L par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ ActifComparaison des spécifications
| Paramètre | STS5DNF60L | STS4DNF60L |
|---|---|---|
| Marque | STMicroelectronics | STMicroelectronics |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,48 | $0,54 |
| Drain-to-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D) at 25 °C | 5 A per channel | — |
| On-Resistance R_DS(on) (typ.) | 35 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) (max) | 45 mΩ at V_GS = 10 V, I_D = 2 A | < 0.055 Ω |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) value] | — |
| Gate Charge Q_g | [DATA_NEEDED: Q_g total gate charge value] | — |
| Technology | STripFET II trench N-channel | STripFET (strip-based, 2nd generation) |
| Configuration | Dual independent N-channel | — |
| Boîtier | SO-8 (8-SOIC, surface mount) | SO-8 (8-pin, surface mount) |
| Type de montage | Surface Mount | Surface Mount |
| Power Dissipation P_D (per datasheet) | 2 W | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature min/max] | -55 °C to +175 °C (junction) |
| Automotive Grade | Automotive-grade qualified | — |
| RoHS Compliance | Compliant | — |
| Avalanche Rating | 100% avalanche tested | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 per JEDEC J-STD-020 |
| Type de transistor | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D) | — | 4 A per channel |
| On-Resistance R_DS(on) (typ) | — | 0.045 Ω at V_GS = 10 V |
| Total Power Dissipation (P_tot) | — | 2 W |
| Gate-Source Threshold Voltage | — | [DATA_NEEDED: V_GS(th) minimum/typical/maximum] |
| Gate Drive | — | Low threshold drive (logic-level compatible) |
| Number of Channels | — | 2 (dual N-channel on one die) |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Manufacturing Process | — | STripFET "Single Feature Size" strip-based process |