STS5DNF60L vs STS4DNF60L 对比

详细并排对比 STS5DNF60L 出自 STMicroelectronics 和 STS4DNF60L 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
STS4DNF60L STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST

STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST

STS4DNF60L ✓ 量产中

规格对比

参数 STS5DNF60L STS4DNF60L
品牌 STMicroelectronics STMicroelectronics
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.54
Drain-to-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D) at 25 °C 5 A per channel —
On-Resistance R_DS(on) (typ.) 35 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) (max) 45 mΩ at V_GS = 10 V, I_D = 2 A < 0.055 Ω
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) value] —
Gate Charge Q_g [DATA_NEEDED: Q_g total gate charge value] —
Technology STripFET II trench N-channel STripFET (strip-based, 2nd generation)
Configuration Dual independent N-channel —
封装 SO-8 (8-SOIC, surface mount) SO-8 (8-pin, surface mount)
安装类型 Surface Mount Surface Mount
Power Dissipation P_D (per datasheet) 2 W —
工作温度范围 [DATA_NEEDED: operating temperature min/max] -55 °C to +175 °C (junction)
Automotive Grade Automotive-grade qualified —
RoHS Compliance Compliant —
Avalanche Rating 100% avalanche tested —
MSL 等级 [DATA_NEEDED: MSL rating] 1 per JEDEC J-STD-020
晶体管类型 — Dual N-Channel MOSFET Array
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D) — 4 A per channel
On-Resistance R_DS(on) (typ) — 0.045 Ω at V_GS = 10 V
Total Power Dissipation (P_tot) — 2 W
Gate-Source Threshold Voltage — [DATA_NEEDED: V_GS(th) minimum/typical/maximum]
Gate Drive — Low threshold drive (logic-level compatible)
Number of Channels — 2 (dual N-channel on one die)
RoHS 状态 — Compliant
Lead-Free — Yes
Manufacturing Process — STripFET "Single Feature Size" strip-based process

数据手册与资源

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