UCC21550 vs UCC21540 Perbandingan

Perbandingan bersamaan detil UCC21550 dari Texas Instruments dan UCC21540 dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Texas Instruments
UCC21550 UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum UCC21550 UCC21540
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Kanal 2 (dual-channel) —
Peak Source Current 4 A —
Peak Sink Current 6 A —
Isolation Rating 5000 Vrms (reinforced, UL1577) 5.7 kVRMS (reinforced)
Isolation Technology Capacitive (silicon dioxide) Capacitive coupling
Configurations Dual low-side, dual high-side, or half-bridge —
Supported Transistors MOSFET, SiC, GaN, IGBT —
Dead Time Programmable via DT pin resistor —
UVLO Yes, on input and output supplies (A/B/C grade options) —
Suhu Kerja -40C to +150C [DATA_NEEDED: operating temperature range]
Paket 16-SOIC (DW, 300 mil) SOIC-16 (DW); DWK with 3.3-mm channel spacing
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification UCC21550x-Q1 family AEC-Q100 qualified —
Status RoHS Compliant Compliant
CMTI [DATA_NEEDED: common-mode transient immunity] —
Propagation Delay [DATA_NEEDED: typical propagation delay] —
Output Current (Peak Source) — 4 A
Output Current (Peak Sink) — 6 A
Number of Channels — 2
Secondary-Side UVLO — 8 V
Output-Side Supply Range (VDD) — 6.5 V to 18 V
Programmable Deadtime — Yes (DT pin)
Disable Pin — Yes (DIS)
Driven Devices — Power MOSFET, IGBT, GaN transistor
Channel-to-Channel Spacing (DWK) — 3.3 mm
Isolation Type — Reinforced / galvanic

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