BSC035N10NS5ATMA1 - 100V 3.5mOhm N-Ch OptiMOS 5 MOSFET | Infineon
N.º de pieza: BSC035N10NS5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.18 | $21,80 |
| 100 | $1.89 | $189,00 |
| 500 | $1.62 | $810,00 |
| 1.000 | $1.38 | $1.380,00 |
| 5.000 | $1.12 | $5.600,00 |
BSC035N10NS5ATMA1 Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching device in modern switched-mode power supplies, motor drives, and DC-DC converters. Within the power semiconductor family, N-channel enhancement MOSFETs are the most common, sitting in the hierarchy as MOSFET -> FET -> transistor -> discrete semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform, pushing the figure of merit (FOM = RDS(on) x Qg) downward to enable higher switching frequencies and lower total losses.
Key benefits of this part include 2.5W power dissipation at TA=25C and 156W at Tc=25C, a logic-level compatible gate drive, and superior thermal resistance via the SuperSO8 exposed pad. It is engineered for high-side and low-side synchronous rectification in switched-mode power supplies, where low RDS(on) directly reduces conduction losses and high dv/dt immunity reduces ringing and EMI.
Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, high-frequency buck/boost converters in computing and telecom, hot-swap and OR-ing circuits in server PSUs, motor drive half-bridges in 24V industrial systems, and USB-PD / Type-C adapters requiring high efficiency. The wide 100V rating also gives ample margin in 24V and 48V bus systems with inductive transients.
When designing with the BSC035N10NS5, place the gate-drive resistor (typically 10 Ohm) close to the gate pin to suppress parasitic turn-on, and provide a Kelvin source connection to the exposed pad on pin 1 for accurate current sensing. Use the smallest possible gate-drive loop and keep the source-pad copper pour thermally massive to maximize heat extraction.
This page combines distributor pricing, datasheet specifications, drop-in alternatives, and practical design notes not always visible on the manufacturer's product brief.
Alternativas directas para BSC035N10NS5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSC035N10NS5ATMA1 (mismo factor de forma y huella) — difiere en Operating Temperature Range, Package, Technology.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSC035N10NS5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC050N10NS5ATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC040N10NS5ATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.93 / unidad
Ver hoja de datos →NVMFS5C423NLAFT1G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
STL9N100M5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FDMT800100DC
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC035N10NS5ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Number | BSC035N10NS5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS max) | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| On-Resistance (RDS(on) max) | 3.5 mOhm |
| Power Dissipation (TA=25C) | 2.5 W |
| Power Dissipation (Tc=25C) | 156 W |
| Encapsulado | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount |
| Configuration | Single N-channel MOSFET |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) |
| Gate Drive | Logic-level compatible (10V VGS) |
| Estado RoHS | Compliant |
| Packaging | Tape & Reel (T&R) |
Configuración de pines de BSC035N10NS5ATMA1
| Pin 1 | Source — Source terminal, Kelvin connection recommended for accurate gate drive |
| Pin 2 | Gate — Gate drive input; 10V VGS typical for low RDS(on) |
| Pin 3 | Drain — Drain terminal, connected to package thermal pad |
| Pin 4 | Drain — Drain terminal, connected to package thermal pad |
| Pin 5 | Drain — Drain terminal, connected to package thermal pad |
| Pin 6 | Drain — Drain terminal, connected to package thermal pad |
| Pin 7 | Drain — Drain terminal, connected to package thermal pad |
| Pin 8 | Drain — Drain terminal, connected to package thermal pad |
| Pin PAD | Thermal Pad / Drain — Exposed thermal pad, electrically tied to drain for maximum heat spreading |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
BSC035N10NS5ATMA1 es adecuado para 6 aplicacións: Synchronous Rectification in 48V Telecom DC-DC Converters, Hot-Swap and OR-ing Circuits in Server PSUs, High-Frequency Buck/Boost Converters in Computing and Telecom, USB-PD and Type-C Adapters (High-Side Switch), 24V Industrial Motor Drive Half-Bridges, Battery Protection and Battery Management in 48V Packs.
Synchronous Rectification in 48V Telecom DC-DC Converters
The BSC035N10NS5ATMA1's 3.5 mOhm RDS(on) at 10V VGS and 100V VDS rating make it ideal as the low-side synchronous rectifier in isolated and non-isolated 48V telecom DC-DC converters. In a typical 48V-to-point-of-load (PoL) topology, this device sits between the transformer secondary or buck inductor and ground, replacing lossy Schottky diodes. With 100V of headroom on the drain, the MOSFET easily absorbs ringing and transient spikes above the 48V rail without breakdown. Compared to a Schottky diode of similar rating, the BSC035N10NS5ATMA1 reduces conduction loss roughly 4x at 20-30A loads, lifting overall converter efficiency above 96% in 48V-to-12V designs and shrinking the heatsink or eliminating it entirely.
Recomendado
Hot-Swap and OR-ing Circuits in Server PSUs
The 100V BSC035N10NS5ATMA1 is well suited as the pass or OR-ing element in 48V server PSU hot-swap and OR-ing circuits. Its 100A continuous drain current (derated appropriately for PCB copper) easily handles the load currents drawn by modern server boards at 48V, while the 3.5 mOhm RDS(on) minimizes the voltage drop across the FET during normal operation. During a hot-swap event, the part's avalanche rating and dv/dt immunity keep the device within SOA while the board capacitance charges, and the exposed SuperSO8 pad spreads the heat from the 156W (Tc) thermal budget into the surrounding copper pour.
Recomendado
High-Frequency Buck/Boost Converters in Computing and Telecom
Operating from 25V to 100V rails at switching frequencies from 100 kHz to over 1 MHz, the BSC035N10NS5ATMA1 leverages its low Qg (approximately 45 nC) and 44% lower output capacitance than the previous OptiMOS generation to keep switching losses manageable at high frequency. In a 48V buck converter stepping down to a 12V or 5V intermediate bus, the device cuts both high-side and low-side switching losses, enabling either smaller magnetics (raising power density) or higher efficiency at the same frequency. The 100V VDS also gives margin against voltage overshoot caused by stray inductance on the switching node, which is critical in low-inductance layouts running >500 kHz.
Recomendado
USB-PD and Type-C Adapters (High-Side Switch)
USB-PD and Type-C adapters operating from 20V or 28V outputs use MOSFETs to switch VBUS and protect against faults. The BSC035N10NS5ATMA1's 100V rating handles 28V PD outputs with generous margin, while the 3.5 mOhm RDS(on) keeps losses on the high-side switching path low at 5A and 20V (only ~0.5W per FET). The SuperSO8 5x6 mm footprint fits the dense PCB layout of modern GaN-based adapters, and the part can also be used as the output load-switch FET in 28V laptop charging where polarity reversal and over-current events demand a robust FET.
Recomendado
24V Industrial Motor Drive Half-Bridges
Industrial 24V brushless DC and stepper motor drives use 100V-rated MOSFETs in the half-bridges to handle back-EM transients that can easily double the nominal rail during regeneration events. The BSC035N10NS5ATMA1 absorbs those spikes on its 100V drain rating while its 100A continuous drain current (with appropriate cooling) drives multi-ampere motor windings directly. The SuperSO8 package is small enough to fit in compact motor-control modules, and the exposed pad maximizes heat extraction to the PCB copper or attached heatsink.
Recomendado
Battery Protection and Battery Management in 48V Packs
The BSC035N10NS5ATMA1 is suitable as the high-side or low-side protection FET in 48V lithium-ion or lead-acid battery packs. Its 100V VDS easily covers a fully-charged 48V Li-ion pack plus spike margin, while the 3.5 mOhm RDS(on) limits the voltage drop during high-current discharge (>30A continuous). In a typical 16S Li-ion battery management system (BMS), this FET is in series with the battery stack and conducts continuously, so its low RDS(on) reduces self-heating and improves round-trip efficiency. The SuperSO8 footprint suits the dense BMS layouts used in electric bicycles, scooters, and stationary energy storage.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSC035N10NS5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC035N10NS5 | BSC050N10NS5ATMA1 | BSC040N10NS5ATMA1 | NVMFS5C423NLAFT1G | STL9N100M5 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | SO-8FL (DFN 5x6) - same footprint | PowerFLAT 5x6 - same footprint |
| VDS Max (V) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| RDS(on) Max (mOhm) | 3.5 mOhm at VGS=10V | 3.5 mOhm | 5.0 mOhm | 4.0 mOhm | 3.4 mOhm | 3.0 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi Trench | MDmesh M5 |
Diferenciadores clave
- Lowest RDS(on) in Infineon SuperSO8 OptiMOS 5 line at this VDS class (frente a BSC050N10NS5ATMA1)
- OptiMOS 5 44% lower output capacitance vs prior generation (frente a BSC040N10NS5ATMA1)
- Cross-brand pin compatibility with onsemi and ST equivalents (frente a NVMFS5C423NLAFT1G (onsemi) and STL9N100M5 (STMicroelectronics))
Notas de diseño
Keep the high-current switching loop as small as possible: place the input/decoupling capacitors and the FET drain-source loop in a tight circle to minimize parasitic inductance. Estimated: for a 5x6 mm SuperSO8, target loop inductance of <5 nH by routing the high-current return directly across the bottom thermal pad.
The exposed thermal pad is electrically tied to the drain and is the primary heat-spreading path. Use a multi-layer PCB with at least 2 oz copper on top/bottom and stitch thermal vias (12-16, 0.3-0.5 mm drill) directly under the pad to maximize heat transfer to inner copper pours. Estimated: 4-layer 2 oz FR4 with 16 thermal vias gives RthJA near 50 C/W vs 156W Tc, allowing ~50A continuous with appropriate copper area.
Pin 1 (Source) and the gate pin are physically close to the drain pad - avoid running drain copper under the gate trace, which can couple dv/dt back into the gate and cause shoot-through in half-bridge topologies. Keep the gate-drive resistor (typically 4.7-10 Ohm) close to pin 2, and reference the gate-drive return to pin 1 (Kelvin source) rather than to the source pad to avoid Cgd x Rg-induced turn-on.
Drive the gate to 10V to achieve the published 3.5 mOhm RDS(on); values closer to 4V may double on-resistance. Use a dedicated gate driver (UCC27531 / ECP05251) rather than a logic-level output pin to ensure fast dV/dt transitions of >1V/ns. Add a 100 kOhm gate-source pull-down to keep the FET off during controller start-up before the driver asserts.
Información de cumplimiento
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - the standard part is not automotive grade; check the -Q1 variant suffix for automotive applications.
