BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
N.º de pieza: BSC072N08NS5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.99 | $0,99 |
| 10 | $0.85 | $8,50 |
| 100 | $0.72 | $72,00 |
| 500 | $0.61 | $305,00 |
| 1.000 | $0.54 | $540,00 |
| 5.000 | $0.46 | $2.300,00 |
BSC072N08NS5ATMA1 Descripción general
What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route and regulate current in electronic circuits. N-channel MOSFETs conduct between drain and source when a positive gate-source voltage is applied, offering low on-resistance per unit silicon area. Power MOSFETs form a sub-category of discrete semiconductors within the power management hierarchy, sitting alongside IGBTs, voltage regulators, and DC-DC converters, and they are typically used as synchronous rectifier or low-side switching elements in switched-mode power supplies (SMPS), motor drives, and battery management circuits.
Key features of the BSC072N08NS5ATMA1 include a maximum drain-source voltage (VDS) of 80 V, continuous drain current of 74 A at case (Tc), pulsed current handling suited to inductive loads, an ultra-low typical on-resistance (RDS(on)) of 7.2 mOhm at VGS = 10 V, and an industry-standard SuperSO8 5x6 mm footprint. The OptiMOS 5 process trades lower gate charge and lower figure of merit (FOM) for the same RDS(on), directly reducing switching and conduction losses in 48 V and 24 V bus applications.
Architecturally, OptiMOS 5 uses an advanced trench cell structure with optimized charge balance, achieving a low RDS(on)*Qg figure of merit versus earlier generations. The SuperSO8 package provides a low thermal resistance path through the exposed pad, supporting high continuous current without external heatsinking at moderate duty cycles.
Typical applications for BSC072N08NS5ATMA1 include synchronous rectification in 48 V telecom and server bus converters, high-current buck or buck-boost converters in industrial point-of-load regulation, battery management and protection in 12 V/24 V Li-ion packs, brushless DC motor drive half-bridges, and solar micro-inverter low-side switches. The 80 V rating provides comfortable headroom for 24 V industrial and 36 V/48 V nominal bus rails.
When designing with this MOSFET, ensure the gate driver can source and sink enough current to charge Qg within the desired switching period, and provide a low-impedance Kelvin source connection (the SuperSO8 pinout supports this) to keep gate-loop inductance low and avoid ringing. A heatsink or substantial copper pour is required for continuous high-current operation above 3-5 W dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including a side-by-side comparison against same-family Infineon OptiMOS 5 parts and competing N-channel MOSFETs in the same PG-TDSON-8-7 footprint.
Alternativas directas para BSC072N08NS5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSC072N08NS5ATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Drain-Source Voltage (VDS), MSL Level, Power Dissipation (Tc).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSC030N08NS5ATMA1
✅ Sustitución directa✓ En stock
$0.55 / unidad
Ver hoja de datos →BSC040N10NS5ATMA1
✅ Sustitución directa✓ En stock
$0.93 / unidad
Ver hoja de datos →BSC021N08NS5ATMA1
✅ Sustitución directa✓ En stock
$0.81 / unidad
Ver hoja de datos →BSC014N06NSATMA1
✅ Sustitución directa✓ En stock
$0.89 / unidad
Ver hoja de datos →BSC059N04LS6ATMA1
✅ Sustitución directa✓ En stock
$0.74 / unidad
Ver hoja de datos →IPT015N10N5ATMA1
✅ Sustitución directa✓ En stock
$2.78 / unidad
Ver hoja de datos →BSC072N08NS5ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Family | BSC072N08NS5 (OptiMOS 5) |
| Tipo de transistor | N-Channel MOSFET |
| Technology | OptiMOS 5 |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) at Tc | 74 A |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 69 W |
| Encapsulado | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Shipping Pack | Tape & Reel (ATMA1) |
| Standard Pack Quantity | 5000 |
Configuración de pines de BSC072N08NS5ATMA1
| Pin 1 | Source — Source (Kelvin source connection) |
| Pin 2 | Source — Source |
| Pin 3 | Source — Source |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain |
| Pin 6 | Drain — Drain |
| Pin 7 | Drain — Drain |
| Pin 8 | Drain — Drain |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
BSC072N08NS5ATMA1 es adecuado para 6 aplicacións: 48V Telecom Synchronous Rectification, 24V Industrial Buck Converter Low-Side Switch, 24V/36V BLDC Motor Drive Half-Bridge, Battery Management Protection Switch (12V/24V Pack), Solar Micro-Inverter Low-Side Switch, USB-PD / High-Current Hot-Swap Switch.
48V Telecom Synchronous Rectification
BSC072N08NS5ATMA1 is well suited as the synchronous rectifier in 48V telecom bus converters and isolated half-bridge stages. The 80V VDS rating provides comfortable transient headroom above the 48V nominal rail, and the 7.2 mOhm RDS(on) keeps conduction loss low at 30-50A continuous current. Placed in the low-side position of a buck or forward-derived topology with a Kelvin source connection to the gate driver, the OptiMOS 5 process also minimizes reverse-recovery charge (Qrr) versus older generations. Trade-off: versus a 3.0 mOhm part like BSC030N08NS5ATMA1, conduction loss is roughly 2.4x higher at the same current, so for full-load 60A+ designs the lower-RDS(on) sibling is preferred.
Recomendado
24V Industrial Buck Converter Low-Side Switch
BSC072N08NS5ATMA1 fits as the low-side MOSFET in 24V industrial buck and buck-boost point-of-load converters. The 80V VDS rating covers the 24V nominal rail plus 60-80% transient margin typical of industrial environments, while the SuperSO8 PG-TDSON-8-7 footprint allows direct PCB layout reuse from existing 24V POL designs. The Infineon OptiMOS 5 platform provides low Qg, enabling switching frequencies above 200 kHz without prohibitive gate-drive losses. Consider thermal performance: at 5A continuous with 12V drop the part dissipates roughly 0.3W internally, well within the 2.5W Ta rating, but at 20A the same conduction loss rises to 2.9W and the exposed thermal pad must be soldered to a substantial copper pour.
Recomendado
24V/36V BLDC Motor Drive Half-Bridge
BSC072N08NS5ATMA1 is appropriate for one half-bridge position in 24V/36V brushless DC (BLDC) motor drive stages. The 80V VDS rating tolerates the back-EMF of 36V BLDC motors with commutation overshoot margin, and the 74A continuous drain current rating supports motor currents up to roughly 50A RMS with adequate heatsinking. Used in the slow-decay or synchronous rectification portion of a three-phase bridge, the low Qrr of OptiMOS 5 reduces dead-time loss compared to older planar MOSFETs. Trade-off: the lower RDS(on) family members (BSC021N08NS5ATMA1, BSC030N08NS5ATMA1) offer better thermal performance for sub-50A continuous operation but share the same footprint.
Recomendado
Battery Management Protection Switch (12V/24V Pack)
BSC072N08NS5ATMA1 fits as a low-side protection or hot-swap disconnect switch in 12V/24V Li-ion battery management systems. The 80V VDS rating handles load-dump transients on 24V automotive-style buses, while the 7.2 mOhm RDS(on) keeps continuous conduction loss acceptable for protection paths that typically carry 20-40A. In a battery management IC reference design where the FET acts as the discharge MOSFET, the SuperSO8 footprint is the de-facto industry standard. Note: the part is not AEC-Q100 qualified per the available data, so for full automotive-grade designs the AEC-Q100 qualified Infineon variant should be specified.
Recomendado
Solar Micro-Inverter Low-Side Switch
BSC072N08NS5ATMA1 can be used as the low-side switch in a 36V/48V solar micro-inverter stage, leveraging the 80V VDS rating to handle photovoltaic open-circuit voltage transients. The OptiMOS 5 process provides low Qg and Qrr, which improves light-load efficiency critical to the European weighted-efficiency rating of micro-inverters. Trade-off: for micro-inverter designs above 600W where full-load current exceeds 50A, the BSC021N08NS5ATMA1 or BSC030N08NS5ATMA1 (both pin-compatible in PG-TDSON-8-7) provide lower conduction loss.
Recomendado
USB-PD / High-Current Hot-Swap Switch
BSC072N08NS5ATMA1 serves as the protection switch in USB-PD 28V/36V/48V hot-swap paths where the 80V VDS rating provides margin above the 28V nominal extended-PD range. The 7.2 mOhm RDS(on) at 10A adds approximately 0.5W of conduction loss, manageable in a small SMD footprint, while the 74A pulsed rating handles cable hot-plug transients. For higher-current 100W+ USB-PD EPR applications at 28V/36V/48V, the BSC040N10NS5ATMA1 (100V) or BSC021N08NS5ATMA1 (2.1 mOhm) drop-in alternatives provide more thermal margin in the same SuperSO8 footprint.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSC072N08NS5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC030N08NS5ATMA1 | BSC040N10NS5ATMA1 | BSC021N08NS5ATMA1 | BSC014N06NSATMA1 | BSC059N04LS6ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same |
| Drain-Source Voltage (VDS) Max | 80 V | 80 V | 100 V | 80 V | 60 V | 40 V | 100 V |
| On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | 3.0 mOhm at VGS=10V | 4.0 mOhm at VGS=10V | 2.1 mOhm at VGS=10V | 1.4 mOhm at VGS=10V | 5.9 mOhm at VGS=10V | 1.5 mOhm at VGS=10V |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS 5 |
| Shipping Pack | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) |
Diferenciadores clave
- Lower RDS(on) drop-in available in same footprint (frente a BSC030N08NS5ATMA1)
- Higher-voltage 100V drop-in available (frente a BSC040N10NS5ATMA1)
- Very-low-RDS(on) drop-in for highest-current stages (frente a BSC021N08NS5ATMA1)
Notas de diseño
At continuous 30A with 12V drop (VDS), the BSC072N08NS5ATMA1 dissipates roughly P = I^2 * RDS(on) = 30^2 * 0.0072 = 6.5W. With the SuperSO8 PG-TDSON-8-7 thermal resistance of approximately 50 C/W on a 1-square-inch copper pour, junction temperature rises about 325C above ambient - clearly exceeding the 150C limit. A larger copper pour (4+ square inches), forced air, or a heatsink is required for continuous operation above 15-20A. Estimated: based on 30A, 12V VDS, 7.2 mOhm RDS(on), 50 C/W theta_JA, 25C ambient.
Use the Kelvin source connection (pin 1-3, separate from the power source bond) for the gate driver return path to keep gate-loop inductance below 5 nH. Place the gate driver within 10mm of the gate pin. The drain copper pour must extend beneath the exposed thermal pad to the largest practical area; thermal vias under the pad (12-16 vias, 0.3mm drill) are recommended to push heat into inner PCB copper layers.
Do not exceed the 80V VDS rating even transiently - load-dump or inductive kickback transients can easily spike above the DC bus voltage. Add a TVS clamp or snubber across the drain-source of any switch driving an inductive load (motor winding, transformer primary). The 74A continuous ID rating is at Tc (case temperature); derate aggressively to Ta and verify with measured thermal data, not just datasheet curves.
Use 1oz copper minimum for power path layers, with 2oz preferred for >30A designs. Place input/output capacitors as close to the drain and source pads as physically possible to minimize switching-loop inductance. Gate-drive traces should be at least 0.2mm wide and kept short; avoid running gate traces parallel to drain traces to reduce capacitive coupling.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. Standard part is not AEC-Q100 qualified - automotive applications require AEC-Q100-qualified Infineon variants.
