BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon
N.º de pieza: BSS138NH6327XTSA2 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.27 | $27,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
| 3.000 | $0.15 | $450,00 |
BSS138NH6327XTSA2 Descripción general
A small-signal N-channel MOSFET such as the BSS138N is a voltage-controlled majority-carrier device used to switch or amplify low-level signals; the enhancement-mode variant is normally off at zero gate bias and turns on when V_GS exceeds the threshold voltage. Within the broader taxonomy it belongs to the discrete MOSFET family, then to field-effect transistors, then to discrete semiconductors. SIPMOS denotes Infineon's proprietary SIP (system-in-package) lateral MOSFET process, optimized for low gate charge and fast switching at low currents.
Key features include 60 V drain-source breakdown, 3.5 ohm max R_DS(on), 230 mA continuous drain current at 25 C ambient, 360 mW power dissipation at Ta, logic-level gate drive, dv/dt ruggedness, and AEC-Q101 automotive qualification. The PG-SOT-23 footprint provides industry-standard land patterns accepted across consumer, industrial, and automotive boards, simplifying second-sourcing.
Technically the BSS138N uses a planar SIPMOS die with low Q_G and Q_GD, which keeps switching losses small and enables efficient PWM operation in the kHz range. Body-diode reverse recovery is intentionally soft for this class, suitable for low-current synchronous-rectifier or freewheel duty in sub-1 A converters. The gate oxide is rated for ±20 V V_GS, providing margin against transient over-drive.
Typical applications include level shifters and signal translation between 3.3 V microcontrollers and 12 V loads, low-side switching for relays, solenoids, and LEDs, flyback or boost aux converters in sub-watt power supplies, and generic analog switches. It is also widely used as a digital signal multiplexer building block and load driver in IoT nodes.
When designing with this part, observe the 360 mW Ta dissipation budget - at 230 mA in SOT-23 the device derates quickly above 25 C, so compute junction temperature rise carefully. Place the gate pull-down resistor directly at the gate pin to prevent unintended turn-on from leakage on floating MCU outputs.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas directas para BSS138NH6327XTSA2 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSS138NH6327XTSA2 (mismo factor de forma y huella) — difiere en Package, Continuous Drain Current (ID), Technology, Drain-Source Voltage (VDS), Qualification.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
2N7002H6327XTSA2
✅ Sustitución directa✓ En stock
$0.08 / unidad
Ver hoja de datos →BSS214NH6327XTSA1
✅ Sustitución directa✓ En stock
$0.09 / unidad
Ver hoja de datos →BSS308PEH6327XTSA1
✅ Sustitución directa✓ En stock
$0.11 / unidad
Ver hoja de datos →BSS84PH6327XTSA2
✅ Sustitución directa✓ En stock
$0.1 / unidad
Ver hoja de datos →2N7002L
✅ Sustitución directa✓ En stock
$0.028 / unidad
Ver hoja de datos →BSS138NH6327XTSA2 Valores máximos y características eléctricas
| Polarity | N-Channel |
| Operating Mode | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V |
| R_DS(on) max @ V_GS=10V | 3.5 ohm |
| Continuous Drain Current (Ta) | 230 mA |
| Power Dissipation (Ta) | 360 mW |
| Encapsulado | PG-SOT-23 (3-pin) |
| Tipo de montaje | Surface Mount |
| Gate-Source Voltage V_GS max | ±20 V |
| dv/dt Rated | Yes |
| Sin halógenos | Yes (per IEC 61249-2-21) |
| RoHS Compliance | Compliant |
| AEC-Q101 Qualification | Qualified |
| Lead Plating | Pb-free |
| Packaging | Tape and Reel |
Configuración de pines de BSS138NH6327XTSA2
| Pin 1 | Gate — MOSFET gate input; logic-level drive, ±20 V V_GS max |
| Pin 2 | Source — Source terminal; connect to ground for low-side switching |
| Pin 3 | Drain — Drain terminal; thermal tab electrically connected to drain |
Área de funcionamiento seguro (estimated, low-power small-signal)
Aplicaciones típicas
BSS138NH6327XTSA2 es adecuado para 6 aplicacións: Logic-Level Low-Side Switch, Level Shifter / Signal Translation, LED Driver and Backlight Switch, Analog Switch and Multiplexer Building Block, Flyback / Boost Aux Converter Switch, Automotive ECU Load Driver.
Logic-Level Low-Side Switch
The BSS138NH6327XTSA2 is a textbook low-side switch for 3.3 V or 5 V MCU outputs driving relays, solenoids, LEDs, and small DC loads. Its enhancement-mode N-channel architecture with V_GS(th) around 1.4 V enables direct gate drive from a logic-level GPIO without a driver stage; the part sits between the load and ground, with the drain tied to the load's negative terminal. At 200 mA load the conduction loss is roughly 140 mW into 3.5 ohm R_DS(on), well below the 360 mW dissipation budget; designers should still derate above 25 C ambient.
Recomendado
Level Shifter / Signal Translation
The BSS138NH6327XTSA2 is widely used as a unidirectional level shifter between a 3.3 V MCU and a 12 V or 24 V peripheral rail. With the gate driven from the low-voltage domain via a pull-up resistor, the drain can pull a 12 V signal down to ground through the source when the MOSFET turns on, producing a clean inverted logic-level translation. The 60 V V(BR)DSS safely tolerates 12 V and 24 V bus voltages with ample transient margin, and the 3.5 ohm R_DS(on) gives fast edges for sub-MHz digital signals.
Recomendado
LED Driver and Backlight Switch
The BSS138NH6327XTSA2 is well suited to low-current LED strings and small backlight arrays where the LED anode ties to a 5 V or 12 V rail and the cathode connects to the MOSFET drain. PWM dimming is supported because the device's low gate charge and small Q_GD produce clean edges at kHz-range PWM frequencies without shoot-through or excessive switching loss. At 230 mA continuous rating it covers single high-brightness LEDs up to roughly 150 mA forward current with adequate thermal headroom.
Recomendado
Analog Switch and Multiplexer Building Block
The BSS138NH6327XTSA2 in PG-SOT-23 is a classic analog-switch element used in low-leakage signal routing, audio muting, and small multiplexer arrays. With the drain and source used symmetrically, it can pass AC or DC signals up to roughly 60 V PEAK; R_DS(on) of 3.5 ohm introduces minimal series resistance for sub-mA analog signals. Its low gate charge and dv/dt rating suit audio sample-and-hold or test-equipment switching paths.
Recomendado
Flyback / Boost Aux Converter Switch
The BSS138NH6327XTSA2 is frequently deployed as the primary switch in sub-watt auxiliary converters such as bias supplies, isolated feedback paths, and small flyback or boost stages. The 60 V drain rating tolerates 24 V input buses with avalanche headroom for transformer leakage spikes, while 230 mA continuous drain covers auxiliary rails up to 1-2 W. Switching frequency up to roughly 100 kHz is achievable given the part's modest gate charge and dv/dt ruggedness.
Recomendado
Automotive ECU Load Driver
The BSS138NH6327XTSA2 carries AEC-Q101 qualification, making it directly usable in automotive ECUs for driving indicator LEDs, small relays, and logic-level translation between 3.3 V MCUs and 12 V body-control buses. Its halogen-free Pb-free plating, RoHS compliance, and dv/dt rating satisfy automotive reliability requirements. Engineers should still compute junction temperature rise under worst-case ambient (typically 85 C) using the 360 mW dissipation rating and the SOT-23 thermal resistance.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSS138NH6327XTSA2 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | 2N7002H6327XTSA2 | BSS214NH6327XTSA1 | BSS84PH6327XTSA2 | 2N7002 |
|---|---|---|---|---|---|
| Package | PG-SOT-23 (3-pin) | PG-SOT-23 - same | PG-SOT-23 - same | PG-SOT-23 - same | SOT-23-3 - same footprint |
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Polarity | N-Channel | N-Channel | N-Channel | P-Channel (mirrored pinout) | N-Channel |
| V(BR)DSS | 60 V | 60 V | 20 V | 60 V | 60 V |
| AEC-Q101 Qualification | Yes | Yes | Yes | Yes | No (standard grade) |
| Logic-Level Gate Drive | Yes (V_GS(th) ~1.4V) | Yes | Yes | Yes | Yes |
Diferenciadores clave
- AEC-Q101 automotive qualification in standard SOT-23 (frente a 2N7002 (standard onsemi))
- Lower R_DS(on) than standard 2N7002 (frente a 2N7002H6327XTSA2)
- 60 V V(BR)DSS versus BSS214N 20 V rating (frente a BSS214NH6327XTSA1)
Notas de diseño
Estimated: at 230 mA continuous load in PG-SOT-23 with R_DS(on) = 3.5 ohm, conduction loss is roughly 185 mW, leaving only ~175 mW margin to the 360 mW Ta rating at 25 C. Junction temperature rise at 25 C ambient is about 130 C/W × 0.185 W ≈ 24 C, which is acceptable, but at 85 C ambient the part derates to ~190 mA continuous. Always compute Tj using the datasheet thermal resistance and derate current accordingly for hot environments.
Use a standard SOT-23 land pattern with the drain tab tied to a small copper pour (at least 10 mm² of 1 oz copper) to spread heat. Place the gate resistor within 5 mm of pin 1 and connect the source pin directly to a ground plane via the shortest possible via. Avoid running signal traces under the package thermal tab to prevent leakage to the drain node.
Do not exceed ±20 V on the gate pin - the datasheet specifies V_GS(max) = ±20 V, and transient overshoot from MCU pin toggling with parasitic inductance can damage the gate oxide. Add a 10 kohm gate pull-down resistor to keep the MOSFET off when the MCU GPIO floats during reset or power-up; otherwise the part may partially turn on from leakage, causing unintended load activation.
For switching applications above 10 kHz, minimize the gate-drive loop area by placing the gate resistor and decoupling capacitor directly at pin 1. Keep the source connection (pin 2) short to ground to reduce common-source inductance, which otherwise causes gate-drive ringing and possible dv/dt-induced turn-on. A 100 ohm gate resistor typically suffices to dampen ringing in SOT-23 layouts.
Información de cumplimiento
RoHS compliant and Pb-free lead plating per Infineon datasheet. AEC-Q101 qualified for automotive applications. Halogen-free per IEC 61249-2-21. dv/dt rated. Lifecycle status active as of 2026-09-10.
