BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon
MPN: BSS138NH6327XTSA2 ✓ פעילBSS138NH6327XTSA2 סקירה
A small-signal N-channel MOSFET such as the BSS138N is a voltage-controlled majority-carrier device used to switch or amplify low-level signals; the enhancement-mode variant is normally off at zero gate bias and turns on when V_GS exceeds the threshold voltage. Within the broader taxonomy it belongs to the discrete MOSFET family, then to field-effect transistors, then to discrete semiconductors. SIPMOS denotes Infineon's proprietary SIP (system-in-package) lateral MOSFET process, optimized for low gate charge and fast switching at low currents.
Key features include 60 V drain-source breakdown, 3.5 ohm max R_DS(on), 230 mA continuous drain current at 25 C ambient, 360 mW power dissipation at Ta, logic-level gate drive, dv/dt ruggedness, and AEC-Q101 automotive qualification. The PG-SOT-23 footprint provides industry-standard land patterns accepted across consumer, industrial, and automotive boards, simplifying second-sourcing.
Technically the BSS138N uses a planar SIPMOS die with low Q_G and Q_GD, which keeps switching losses small and enables efficient PWM operation in the kHz range. Body-diode reverse recovery is intentionally soft for this class, suitable for low-current synchronous-rectifier or freewheel duty in sub-1 A converters. The gate oxide is rated for ±20 V V_GS, providing margin against transient over-drive.
Typical applications include level shifters and signal translation between 3.3 V microcontrollers and 12 V loads, low-side switching for relays, solenoids, and LEDs, flyback or boost aux converters in sub-watt power supplies, and generic analog switches. It is also widely used as a digital signal multiplexer building block and load driver in IoT nodes.
When designing with this part, observe the 360 mW Ta dissipation budget - at 230 mA in SOT-23 the device derates quickly above 25 C, so compute junction temperature rise carefully. Place the gate pull-down resistor directly at the gate pin to prevent unintended turn-on from leakage on floating MCU outputs.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
חלופות תחליף ישיר עבור BSS138NH6327XTSA2 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם BSS138NH6327XTSA2 (אותו גורם צורה וטביעת רגל) — שונים ב Package, Continuous Drain Current (ID), Technology, Drain-Source Voltage (VDS), Qualification.
2N7002H6327XTSA2
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSS214NH6327XTSA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSS308PEH6327XTSA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSS84PH6327XTSA2
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←2N7002L
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSS138NH6327XTSA2 דירוגים מרביים ומאפיינים חשמליים
| Polarity | N-Channel |
| Operating Mode | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V |
| R_DS(on) max @ V_GS=10V | 3.5 ohm |
| Continuous Drain Current (Ta) | 230 mA |
| Power Dissipation (Ta) | 360 mW |
| מארז | PG-SOT-23 (3-pin) |
| סוג הרכבה | Surface Mount |
| Gate-Source Voltage V_GS max | ±20 V |
| dv/dt Rated | Yes |
| נטול הלוגנים | Yes (per IEC 61249-2-21) |
| RoHS Compliance | Compliant |
| AEC-Q101 Qualification | Qualified |
| Lead Plating | Pb-free |
| Packaging | Tape and Reel |
תצורת פינים של BSS138NH6327XTSA2
| פין 1 | Gate — MOSFET gate input; logic-level drive, ±20 V V_GS max |
| פין 2 | Source — Source terminal; connect to ground for low-side switching |
| פין 3 | Drain — Drain terminal; thermal tab electrically connected to drain |
אזור פעולה בטוח (estimated, low-power small-signal)
יישומים טיפוסיים
BSS138NH6327XTSA2 מתאים עבור 6 יישוםs: Logic-Level Low-Side Switch, Level Shifter / Signal Translation, LED Driver and Backlight Switch, Analog Switch and Multiplexer Building Block, Flyback / Boost Aux Converter Switch, Automotive ECU Load Driver.
Logic-Level Low-Side Switch
The BSS138NH6327XTSA2 is a textbook low-side switch for 3.3 V or 5 V MCU outputs driving relays, solenoids, LEDs, and small DC loads. Its enhancement-mode N-channel architecture with V_GS(th) around 1.4 V enables direct gate drive from a logic-level GPIO without a driver stage; the part sits between the load and ground, with the drain tied to the load's negative terminal. At 200 mA load the conduction loss is roughly 140 mW into 3.5 ohm R_DS(on), well below the 360 mW dissipation budget; designers should still derate above 25 C ambient.
מומלץ
Level Shifter / Signal Translation
The BSS138NH6327XTSA2 is widely used as a unidirectional level shifter between a 3.3 V MCU and a 12 V or 24 V peripheral rail. With the gate driven from the low-voltage domain via a pull-up resistor, the drain can pull a 12 V signal down to ground through the source when the MOSFET turns on, producing a clean inverted logic-level translation. The 60 V V(BR)DSS safely tolerates 12 V and 24 V bus voltages with ample transient margin, and the 3.5 ohm R_DS(on) gives fast edges for sub-MHz digital signals.
מומלץ
LED Driver and Backlight Switch
The BSS138NH6327XTSA2 is well suited to low-current LED strings and small backlight arrays where the LED anode ties to a 5 V or 12 V rail and the cathode connects to the MOSFET drain. PWM dimming is supported because the device's low gate charge and small Q_GD produce clean edges at kHz-range PWM frequencies without shoot-through or excessive switching loss. At 230 mA continuous rating it covers single high-brightness LEDs up to roughly 150 mA forward current with adequate thermal headroom.
מומלץ
Analog Switch and Multiplexer Building Block
The BSS138NH6327XTSA2 in PG-SOT-23 is a classic analog-switch element used in low-leakage signal routing, audio muting, and small multiplexer arrays. With the drain and source used symmetrically, it can pass AC or DC signals up to roughly 60 V PEAK; R_DS(on) of 3.5 ohm introduces minimal series resistance for sub-mA analog signals. Its low gate charge and dv/dt rating suit audio sample-and-hold or test-equipment switching paths.
מומלץ
Flyback / Boost Aux Converter Switch
The BSS138NH6327XTSA2 is frequently deployed as the primary switch in sub-watt auxiliary converters such as bias supplies, isolated feedback paths, and small flyback or boost stages. The 60 V drain rating tolerates 24 V input buses with avalanche headroom for transformer leakage spikes, while 230 mA continuous drain covers auxiliary rails up to 1-2 W. Switching frequency up to roughly 100 kHz is achievable given the part's modest gate charge and dv/dt ruggedness.
מומלץ
Automotive ECU Load Driver
The BSS138NH6327XTSA2 carries AEC-Q101 qualification, making it directly usable in automotive ECUs for driving indicator LEDs, small relays, and logic-level translation between 3.3 V MCUs and 12 V body-control buses. Its halogen-free Pb-free plating, RoHS compliance, and dv/dt rating satisfy automotive reliability requirements. Engineers should still compute junction temperature rise under worst-case ambient (typically 85 C) using the 360 mW dissipation rating and the SOT-23 thermal resistance.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור BSS138NH6327XTSA2 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | 2N7002H6327XTSA2 | BSS214NH6327XTSA1 | BSS84PH6327XTSA2 | 2N7002 |
|---|---|---|---|---|---|
| Package | PG-SOT-23 (3-pin) | PG-SOT-23 - same | PG-SOT-23 - same | PG-SOT-23 - same | SOT-23-3 - same footprint |
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Polarity | N-Channel | N-Channel | N-Channel | P-Channel (mirrored pinout) | N-Channel |
| V(BR)DSS | 60 V | 60 V | 20 V | 60 V | 60 V |
| AEC-Q101 Qualification | Yes | Yes | Yes | Yes | No (standard grade) |
| Logic-Level Gate Drive | Yes (V_GS(th) ~1.4V) | Yes | Yes | Yes | Yes |
מבדילים עיקריים
- AEC-Q101 automotive qualification in standard SOT-23 (לעומת2N7002 (standard onsemi))
- Lower R_DS(on) than standard 2N7002 (לעומת2N7002H6327XTSA2)
- 60 V V(BR)DSS versus BSS214N 20 V rating (לעומתBSS214NH6327XTSA1)
הערות תכנון
Estimated: at 230 mA continuous load in PG-SOT-23 with R_DS(on) = 3.5 ohm, conduction loss is roughly 185 mW, leaving only ~175 mW margin to the 360 mW Ta rating at 25 C. Junction temperature rise at 25 C ambient is about 130 C/W × 0.185 W ≈ 24 C, which is acceptable, but at 85 C ambient the part derates to ~190 mA continuous. Always compute Tj using the datasheet thermal resistance and derate current accordingly for hot environments.
Use a standard SOT-23 land pattern with the drain tab tied to a small copper pour (at least 10 mm² of 1 oz copper) to spread heat. Place the gate resistor within 5 mm of pin 1 and connect the source pin directly to a ground plane via the shortest possible via. Avoid running signal traces under the package thermal tab to prevent leakage to the drain node.
Do not exceed ±20 V on the gate pin - the datasheet specifies V_GS(max) = ±20 V, and transient overshoot from MCU pin toggling with parasitic inductance can damage the gate oxide. Add a 10 kohm gate pull-down resistor to keep the MOSFET off when the MCU GPIO floats during reset or power-up; otherwise the part may partially turn on from leakage, causing unintended load activation.
For switching applications above 10 kHz, minimize the gate-drive loop area by placing the gate resistor and decoupling capacitor directly at pin 1. Keep the source connection (pin 2) short to ground to reduce common-source inductance, which otherwise causes gate-drive ringing and possible dv/dt-induced turn-on. A 100 ohm gate resistor typically suffices to dampen ringing in SOT-23 layouts.
מידע על תאימות
RoHS compliant and Pb-free lead plating per Infineon datasheet. AEC-Q101 qualified for automotive applications. Halogen-free per IEC 61249-2-21. dv/dt rated. Lifecycle status active as of 2026-09-10.
