IPB60R190C6ATMA1 - 600V CoolMOS C6 MOSFET 20.2A | Infineon
N.º de pieza: IPB60R190C6ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.18 | $3,18 |
| 10 | $2.86 | $28,60 |
| 100 | $2.4 | $240,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.72 | $1.720,00 |
| 2.500 | $1.45 | $3.625,00 |
IPB60R190C6ATMA1 Descripción general
What is a CoolMOS C6 superjunction MOSFET? A superjunction MOSFET is a high-voltage power MOSFET architecture that replaces the standard vertical DMOS cell with alternating P/N epitaxial columns, dramatically reducing on-state resistance per unit area and switching losses versus conventional planar MOSFETs at 500 V and above. CoolMOS C6 is Infineon's 6th-generation 600 V superjunction family, optimized for hard-switching topologies such as PFC and bridge converters, sitting within the broader hierarchy of power semiconductor devices (MOSFET -> discrete semiconductor -> power management component).
Key features include 190 mOhm maximum RDS(on) at VGS=10 V, an ultra-low gate charge Qg (typical 32 nC) that minimizes driving losses, low effective output capacitance Coss, and a robust intrinsic body diode. The PG-TO263-3 (D2PAK) package provides a low thermal resistance path with a center drain tab for PCB heatsinking, enabling 151 W continuous power dissipation when mounted on a properly sized copper land pattern.
Typical applications include switched-mode power supplies (SMPS), Power Factor Correction (PFC) boost stages, solar inverters, telecom rectifiers, server and data-center PSU primary-side switches, industrial welding and induction-heating converters, and high-voltage LED lighting drivers where 600 V breakdown margin is required for reliability.
When designing with this part, ensure the gate driver provides at least 10 V VGS and that switching frequency dv/dt is controlled within the datasheet's rated slope to limit EMI. The D2PAK tab must be soldered to a sufficient copper pour (typically 1-2 square inches minimum on FR-4) to keep junction temperature below 150 C at full load. Avoid avalanche operation beyond the rated single-pulse avalanche energy (EAS) unless margin is explicitly verified.
Alternativas directas para IPB60R190C6ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPB60R190C6ATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Mounting Type, Operating Temperature Range, Gate Threshold Voltage (VGS(th)).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IPB60R190C6
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IPA60R190C6XKSA1
✅ Sustitución directa✓ En stock
$1.18 / unidad
Ver hoja de datos →IPP60R190P6XKSA1
✅ Sustitución directa✓ En stock
$1.02 / unidad
Ver hoja de datos →IPB60R180P7ATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC190N15NS5ATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IPB60R190C6ATMA1 Valores máximos y características eléctricas
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A |
| Power Dissipation (PD) at Tc=25C | 151 W |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | 32 nC |
| Rango de temperatura de funcionamiento | -55C to +150C |
| Encapsulado | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) |
| Nivel MSL | 1 |
| Estado RoHS | Compliant |
| Avalanche Energy Rated | Yes (EAS per datasheet) |
Configuración de pines de IPB60R190C6ATMA1
| Pin 1 | Gate (G) — MOSFET gate input; drive with 10-15V VGS for full RDS(on) enhancement |
| Pin 2 | Source (S) — MOSFET source; pin 2 and tab are internally connected for D2PAK |
| Pin 3 | Drain (D) — MOSFET drain; this is also the metal tab/heating of the D2PAK package |
Área de funcionamiento seguro (DC, Tj=25C)
Aplicaciones típicas
IPB60R190C6ATMA1 es adecuado para 6 aplicacións: Switched-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Boost Stage, Solar Micro-Inverters and String Inverters, Telecom Rectifiers and Server PSUs, Industrial Welding and Induction Heating, High-Voltage LED Lighting Drivers.
Switched-Mode Power Supplies (SMPS)
The IPB60R190C6ATMA1 is a workhorse primary-side switch in universal-input (90-264 VAC) SMPS for desktop PC, laptop adapter, and server PSU applications. Its 600 V VDS rating provides adequate margin above rectified 400 V bus rails, while the 190 mOhm RDS(on) and 32 nC typical Qg balance conduction and switching losses at 65-130 kHz PWM. The D2PAK package dissipates 151 W with a properly sized copper pad, eliminating external heatsinks in 1-2 kW PSU designs where Infineon's CoolMOS C6 family dominates.
Recomendado
Power Factor Correction (PFC) Boost Stage
The IPB60R190C6ATMA1 is widely deployed in CCM PFC boost stages rated 1-3 kW for 80 Plus Platinum/Titanium server and telecom PSUs. The CoolMOS C6 superjunction technology achieves lower switching losses versus planar 600 V MOSFETs at the 50-100 kHz PFC switching frequencies, while the 20.2 A continuous ID supports 1.5 kW boost inductors operating from 400 V rectified mains. The 190 mOhm RDS(on) keeps conduction losses under 1% efficiency penalty, and the D2PAK footprint enables compact PFC chokes with the switch mounted on the same heatsink as the output rectifier.
Recomendado
Solar Micro-Inverters and String Inverters
The IPB60R190C6ATMA1's 600 V VDS rating provides the 50% safety margin required by micro-inverter topologies switching a 400 V rectified PV bus, making it suitable for residential and small-commercial solar installations. The CoolMOS C6 family handles hard-switching bridge-leg operation at 20-50 kHz with low Qg (32 nC typ) keeping gate-driver losses manageable. The D2PAK package is compatible with conformal coating and potting compounds used in outdoor inverter enclosures, and the 20.2 A ID supports 1.5-2 kW micro-inverter ratings typical of 600 VDC PV string applications.
Recomendado
Telecom Rectifiers and Server PSUs
The IPB60R190C6ATMA1 is a primary-side switch in -48 V telecom rectifier front ends where 600 V breakdown withstands 230 VAC universal-input transients and surge events. The 151 W power dissipation in D2PAK supports 1.5-2 kW hot-plug rectifier modules, and the CoolMOS C6 architecture provides predictable switching performance for paralleled MOSFET configurations. Used widely in 48 V / 100 A telecom shelves and hyperscale data-center 12 V bus converters where 80 Plus Titanium efficiency mandates superjunction silicon.
Recomendado
Industrial Welding and Induction Heating
The IPB60R190C6ATMA1 handles repetitive avalanche stress in industrial welding inverters and induction-heating converters, where ZVS resonant topologies push MOSFETs near their SOA limits. CoolMOS C6 is rated for avalanche operation with EAS within datasheet limits, and the 190 mOhm RDS(on) supports the 15-20 A RMS currents typical of 5-10 kW induction cooktops and small welding sets. The D2PAK tab provides the thermal mass needed for sustained 100+ kHz switching at high duty cycles where junction temperature swings can exceed 50 C.
Recomendado
High-Voltage LED Lighting Drivers
The IPB60R190C6ATMA1 powers high-bay LED drivers in the 200-600 W class operating from 277 VAC commercial mains or 347-480 VAC industrial three-phase inputs. The 600 V VDS handles rectified 480 V bus voltages with margin, while the 20.2 A ID supports 1-2 A average LED string currents through buck or flyback topologies. CoolMOS C6's low Qg (32 nC typ) reduces driver transformer size at 100-200 kHz switching frequencies, enabling compact IP66-rated luminaire drivers where D2PAK's SMT compatibility automates production.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPB60R190C6ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPB60R190C6 | IPA60R190C6XKSA1 | IPP60R190P6XKSA1 | IPB60R180P7ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| VDS (Drain-Source Voltage) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID @ Tc=25C) | 20.2 A | 20.2 A | 20.2 A | 20 A | 20 A |
| RDS(on) max @ VGS=10V | 190 mOhm | 190 mOhm | 190 mOhm | 190 mOhm | 180 mOhm |
| Technology Generation | CoolMOS C6 | CoolMOS C6 | CoolMOS C6 | CoolMOS P6 | CoolMOS P7 |
| Total Gate Charge (Qg) typ | 32 nC | 32 nC | 32 nC | 29 nC (lower) | 26 nC (lower) |
| Power Dissipation (PD @ Tc=25C) | 151 W | 151 W | 151 W | 151 W | 151 W |
Diferenciadores clave
- Mature CoolMOS C6 superjunction platform with proven reliability (frente a IPB60R180P7ATMA1)
- Lower gate charge than older planar 600 V MOSFETs (frente a BSC190N15NS5ATMA1 (150 V OptiMOS, lower VDS class))
- Standardized D2PAK footprint enables drop-in replacement (frente a IPB60R190C6 (same die, bulk pack))
Notas de diseño
Estimated: At full load with ID=20.2 A and RDS(on)=190 mOhm, conduction losses reach ~77 W; switching losses at 100 kHz hard-switching from 400 V bus add another 5-10 W. The D2PAK package has theta_JC ~1 C/W, so junction-to-case delta at 80 W dissipation is roughly 80 C above Tc. Mount the tab on at least 1.5 square inches of 2 oz copper (theta_JA ~50 C/W on 4-layer FR-4) to keep Tj below 125 C at Tc=100 C ambient. A small clip-on heatsink reduces this further for fanless designs.
Design the D2PAK footprint to JEDEC TO-263 land-pattern dimensions (drain pad approx. 10 mm x 9 mm) with at least 6 thermal vias (0.3 mm drill, 1 mm pitch) under the drain tab to inner copper layers. Keep the gate-drive loop area under 1 cm^2 by placing the gate driver IC directly adjacent to the gate pin; this minimizes parasitic inductance that would otherwise cause VGS ringing and dv/dt-induced turn-on. Add a 10 kOhm gate-source resistor and 10-100 Ohm gate series resistor for EMI control.
Do not exceed +/-20 V VGS absolute maximum - even brief overshoot during turn-off can punch through the gate oxide. Ensure the bootstrap supply for half-bridge high-side drivers has sufficient capacitance to keep VGS above 10 V under all load steps. Avoid operating in avalanche beyond the datasheet EAS rating unless the design has been validated thermally. Always observe proper anti-static handling (MSL=1, but still ESD-sensitive during assembly).
Información de cumplimiento
RoHS and REACH compliant per Infineon product page; lead-free reflow soldering per JEDEC J-STD-020 MSL1; not AEC-Q100 automotive qualified - use automotive-grade MOSFET variants if AEC-Q100 is required
