IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon
MPN: IPA60R190C6XKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.1 | $21.00 |
| 100 | $1.68 | $168.00 |
| 500 | $1.42 | $710.00 |
| 1,000 | $1.18 | $1,180.00 |
Drop-in alternatives for IPA60R190C6XKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPP60R190P6XKSA1
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IPW60R080P7XKSA1
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SPA20N60C3XKSA1
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IPA60R190C6XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS C6 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A |
| Power Dissipation (PD, Tc=25C) | 34 W |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Threshold Voltage (VGS(th)) | 3.5 V |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Mounting Type | Through Hole |
| Tab Isolation | Fully isolated (4 kV) |
| RoHS Status | Compliant |
| Lead Free | Yes |
IPA60R190C6XKSA1 Pin Configuration
| Pin 1 | Gate (G) β Gate drive input; 10V typical Vgs for full RDS(on) enhancement |
| Pin 2 | Drain (D) β Main current terminal; tab is electrically connected to drain |
| Pin 3 | Source (S) β Source return and Kelvin reference |
| Pin Tab | Drain (D) β Drain; isolated from die by FullPAK molded body, mechanically bonded to heatsink |
Safe Operating Area (DC)
Typical Applications
IPA60R190C6XKSA1 is suitable for 6 applications: Server and Telecom SMPS, Solar Micro-Inverters, Industrial Welding Equipment, HID Lighting Ballasts, EV On-Board Charger Modules, Industrial Motor Drive / Class-D Audio.
Server and Telecom SMPS
The IPA60R190C6XKSA1 is a strong fit for 600 V primary-side switching in 1-3 kW server and telecom rectifiers, where its 20.2 A continuous drain rating, 190 milliohm RDS(on), and fully isolated TO-220 FullPAK package address the dominant PFC boost and half-bridge stages. Designers pair this part with controllers such as Infineon's ICE2PCS02 (PFC) and ICE2HS01 (half-bridge LLC) to build 80 PLUS Titanium power factor stages. The isolated tab simplifies mounting onto a grounded heatsink, reducing BOM cost by eliminating a mica pad and silicone insulator. Its 4 kV isolation rating also supports telecom NEBS-style hipot compliance on the 230 VAC input side.
Recommended
Solar Micro-Inverters
In 250-600 W micro-inverter modules, the IPA60R190C6XKSA1 handles the high-voltage DC-link switching in a 600 V PFC plus full-bridge topology. The 190 milliohm RDS(on) keeps conduction loss in the 4-6 A continuous current range low enough for fanless outdoor enclosures, while the 600 V drain-source breakdown tolerates 400 VDC bus transients from grid-side inductive kickback. The fully isolated FullPAK tab allows direct bonding to the inverter's aluminum chassis, which doubles as the heatsink. Combined with low Eoss from the C6 superjunction cell, switching losses remain controlled at 50-65 kHz, which is the sweet spot for toroidal-transformer-based micro-inverters targeting CEC-weighted efficiency above 96%.
Recommended
Industrial Welding Equipment
Welding power supplies require MOSFETs that can survive repetitive short-circuit events and high di/dt. The IPA60R190C6XKSA1's robust C6 superjunction die and 600 V rating handle the heavy flyback/forward primary currents of 200-400 A MIG/MAG welders when used in parallel banks. Its 34 W power dissipation at Tc=25C and rugged body-diode reverse recovery support hard-switched bridge topologies without external snubbing in lower-power (under 5 kW) units. The isolated TO-220-FP package also simplifies the double-insulation requirements (IEC 60974-1) common in stick-welder output stages, removing the need for additional insulating hardware in field-serviceable designs.
Recommended
HID Lighting Ballasts
HID ballast circuits for street lighting, grow lights, and projection lamps use 600 V MOSFETs in the half-bridge inverter stage that drives the lamp at 100-400 Hz square-wave AC. The IPA60R190C6XKSA1 with its 190 milliohm RDS(on), 20.2 A drain current, and 600 V breakdown suits 35-150 W lamp ballasts operating from 230 VAC rectified rails. The C6 superjunction process minimizes body-diode reverse-recovery charge (Qrr), reducing commutation losses and EMI in the hard-switched bridge. The isolated FullPAK package also enables a compact IP65-rated ballast housing where the MOSFET is bonded to the same aluminum die-cast enclosure that dissipates lamp heat.
Recommended
EV On-Board Charger Modules
Tier-1 EV on-board chargers (3.3 kW and 6.6 kW) for two-wheeler and entry-level passenger vehicles use 600 V superjunction MOSFETs in the PFC plus isolated full-bridge stage. The IPA60R190C6XKSA1, with 600 V VDS, 20.2 A drain rating, and 190 milliohm RDS(on), fits 6.6 kW OBC modules that require 8-12 A continuous primary current. Its isolated tab supports direct mounting on the OBC's liquid-cooled cold plate, simplifying the thermal path. While automotive AEC-Q101 qualified variants exist in the Infineon portfolio, this commercial-grade part is commonly used in industrial EVSE wallboxes and L1/L2 charging stations where automotive qualification is not mandated.
Recommended
Industrial Motor Drive / Class-D Audio
Although the IPA60R190C6XKSA1 is rated 600 V, lower-voltage Class-D audio amplifiers (300-400 V bus) and small industrial VFDs (Variable Frequency Drives) below 1 kW use similar high-voltage MOSFETs in the H-bridge output stage. With 190 milliohm RDS(on) and 20.2 A peak current, this part can deliver 2-3 kW continuous audio output when bridged in a 2-quadrant topology. The fully isolated FullPAK tab allows mounting on the amplifier's chassis without an additional insulator. Designers favor the C6 family for its audio-band low distortion and low Eoss, which translates to cleaner switching edges and reduced EMI in the 20 Hz-20 kHz audio band.
Recommended
Recommended Products Summary
Engineering reference data for IPA60R190C6XKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP60R190P6XKSA1 | IPA60R165CPXKSA1 | IPP60R190C6XKSA1 | FCPF190N60E | SPA20N60C3XKSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | PG-TO220-FP (FullPAK, isolated) | TO-220 (non-isolated tab) | PG-TO220-FP (FullPAK, isolated) | TO-220 (non-isolated tab) | TO-220-FP (FullPAK, isolated) | TO-220 (non-isolated tab) |
| Drain-Source Voltage VDS | 600 V | 600 V | 600 V | 600 V | 600 V | 650 V |
| Continuous Drain Current ID (Tc=25C) | 20.2 A | 20.2 A | 21 A | 20.2 A | 20 A | 20.7 A |
| On-State Resistance RDS(on) | 190 mOhm @ VGS=10V | 190 mOhm @ VGS=10V | 165 mOhm @ VGS=10V (-13%) | 190 mOhm @ VGS=10V | 190 mOhm @ VGS=10V | 190 mOhm @ VGS=10V |
| Power Dissipation PD (Tc=25C) | 34 W | 34 W | 34 W | 34 W | 37 W | 34 W |
| Process Generation | CoolMOS C6 | CoolMOS P6 | CoolMOS CP | CoolMOS C6 | onsemi SuperFET II | CoolMOS C3 |
| Tab Isolation | Fully isolated (4 kV) | Non-isolated | Fully isolated (4 kV) | Non-isolated | Fully isolated | Non-isolated |
| Approximate 1000-pc Unit Price (USD) | 1.18 | 1.05 | 1.35 | 1.12 | 1.45 | 1.95 |
Key Differentiators
- Isolated FullPAK package eliminates external insulating pad (vs IPP60R190C6XKSA1)
- C6 superjunction process delivers best-in-class RDS(on)*area (vs FCPF190N60E)
- Broad second-source availability across two CoolMOS generations (vs SPA20N60C3XKSA1)
Design Notes
Estimated: at ID=6 A continuous with RDS(on)=190 mOhm, conduction loss is roughly 6.8 W (6^2 * 0.19). Combined with switching loss at 65 kHz, total dissipation reaches 8-9 W. The PG-TO220-FP thermal resistance is approximately 80 C/W junction-to-case; at Tc=80 C, the junction temperature sits around 105-110 C, well within the 150 C limit. A clip-on heatsink with RthSA under 5 C/W is recommended for continuous 6 A operation; below 3 A, free air with the bare FullPAK is acceptable. Apply a thin (~50 um) thermal interface material or thermal pad between the FullPAK tab and heatsink for consistent thermal transfer.
Mount the IPA60R190C6XKSA1 with a clip-on heatsink and M3 screw using a star washer to maintain tab-to-heatsink thermal contact. The gate-drive trace should be kept short (<25 mm) and routed away from the drain node to minimize dv/dt-induced turn-on. Place a 10 ohm gate resistor in series with the gate pin to dampen parasitic ringing, and a 100 kohm pull-down resistor between gate and source to prevent floating-gate turn-on during controller start-up. Use a Kelvin source connection if available to separate gate-drive return from high-current source path.
Designers should place the IPA60R190C6XKSA1 source terminal closest to the controller's PGND pin to minimize parasitic source inductance. The FullPAK isolation allows direct bonding to chassis ground; if non-isolated tab variants (e.g., IPP60R190C6XKSA1) are used, add a silicone insulating pad rated for at least 4 kV. For PFC boost stages, keep the loop between drain, the boost diode, and output capacitor small (<2 cm^2) to limit switching voltage spikes below 80% of VDS rating. Add a 100V TVS or RC snubber across the drain-source terminals if the design operates near the SOA boundary.
Three pitfalls to avoid with the IPA60R190C6XKSA1: (1) Driving the gate above +/-20V VGS absolute maximum will damage the thin gate oxide - always use a gate-drive Zener clamp. (2) Operating at VDS peaks above 600 V during avalanche events will degrade the C6 superjunction cell over time - clamp the drain node with a TVS for inductive loads. (3) Failing to derate ID with temperature will cause thermal runaway; at Tc=100 C, continuous ID drops to roughly 12-13 A. Always reference Infineon's safe operating area curves before committing to a thermal design.
Compliance Information
RoHS compliant and lead-free per Infineon product page; halogen-free molding compound used in FullPAK package. Not AEC-Q100 qualified - this is a commercial-grade part. For automotive AEC-Q101 applications, use Infineon's automotive-qualified IPP60R190P6XKSA1AUMA1 instead.
