IPP60R190P6XKSA1 - 600V CoolMOS P6 N-Channel MOSFET | Infineon
MPN: IPP60R190P6XKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.74 | $17.40 |
| 100 | $1.43 | $143.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
Drop-in alternatives for IPP60R190P6XKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPP60R160P6XKSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPP60R180P6XKSA1
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IPP60R280P6XKSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
NTP190N60S5H
β Drop-Inπ Reference alternative (not in catalog)
STP20N60M2
β Drop-Inβ In Stock
$1.5 / Unit
View Datasheet βFCP190N60E
β Drop-Inπ Reference alternative (not in catalog)
IPP60R190P6XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P6 |
| Technology | Superjunction (SJ) MOSFET |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A |
| On-Resistance RDS(on) max at 25C | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W |
| Package | PG-TO220-3 (through-hole) |
| Mounting Type | Through Hole |
| Gate Drive Voltage (typical) | 10 V |
| Operating Temperature Range | -55C to +150C (junction) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | Not applicable (through-hole) |
| Product Variant | XKSA1 (industrial grade, tube pack) |
IPP60R190P6XKSA1 Pin Configuration
| Pin 1 | Gate β Gate drive input; tie to driver output through gate resistor |
| Pin 2 | Drain β Power drain terminal; tab also internally connected to drain |
| Pin 3 | Source β Power source terminal and signal ground return for gate driver |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IPP60R190P6XKSA1 is suitable for 6 applications: Server SMPS PFC Boost Stage, Industrial Motor Drive Inverter, Solar Microinverter DC-DC Stage, EV On-Board Charger PFC, Telecom Rectifier 48V DC-DC Stage, Auxiliary Power Supply SMPS.
Server SMPS PFC Boost Stage
The IPP60R190P6XKSA1's 600 V VDS, 190 mOhm RDS(on), and 20.2 A ID are well-matched to a 1-3 kW continuous-conduction-mode PFC boost stage fed from universal AC input. The CoolMOS P6 superjunction structure reduces switching loss versus planar 600 V parts, keeping PFC efficiency above 98 percent at 50 percent load. The PG-TO220-3 package accepts a clip-on heatsink and drops directly onto the standard Infineon/onsemi reference layout. Compared to IGBT alternatives, the MOSFET eliminates tail-current loss at the cost of higher RDS(on) at 600 V.
Recommended
Industrial Motor Drive Inverter
In a 3-phase 400 VAC industrial inverter, the IPP60R190P6XKSA1 fits low-power motor drive legs up to 1.5 kW. Its 600 V VDS margin absorbs 380 VDC bus transients and reflected inductive spikes. The 20.2 A continuous current supports motor currents to roughly 7-9 A RMS with proper heatsinking, and the 190 mOhm on-resistance keeps conduction loss below 13 W at full torque. The through-hole TO220-3 mechanically integrates with screw-mount heatsink assemblies common in industrial drives, simplifying assembly versus SMD-only MOSFETs.
Recommended
Solar Microinverter DC-DC Stage
The IPP60R190P6XKSA1 is suitable for a 600 V DC-input boost or LLC DC-DC stage in a residential solar microinverter rated to 600 VDC open-circuit panel voltage. The 600 V rating gives headroom above the European 1000 VDC max Voc plus transient margin. CoolMOS P6's fast body-diode recovery supports zero-voltage-switching in LLC topologies, where reverse-recovery loss dominates hard-switching loss. The 190 mOhm on-resistance delivers full-load efficiency above 96 percent at 25 degC ambient.
Recommended
EV On-Board Charger PFC
A 3.3 kW to 7.4 kW EV on-board charger PFC stage pairs the IPP60R190P6XKSA1 with a CCM or interleaved totem-pole controller. The MOSFET's 20.2 A rating and 190 mOhm RDS(on) deliver up to 3.7 kW per phase at 230 VAC input with 1-2 percent PFC efficiency loss. CoolMOS P6 has AEC-Q101-grade Infineon automotive siblings (IPB60R190P6), but the XKSA1 industrial variant fits non-automotive OBC reference designs. The TO220-3 tab-to-drain connection simplifies single-layer PCB copper pours versus SMD D2PAK alternatives.
Recommended
Telecom Rectifier 48V DC-DC Stage
In a -48 V telecom rectifier using a PFC + isolated DC-DC topology, the IPP60R190P6XKSA1 serves as the primary-side 600 V PFC MOSFET or the high-side switch in a 400 V bus half-bridge. The 20.2 A continuous drain current handles 3 kW rectifier stages, and 190 mOhm RDS(on) limits conduction loss below 1 percent of output power. The TO220-3 through-hole package supports rework-friendly leaded assembly favored in telecom infrastructure where field-replaceable modules dominate over SMT pick-and-place.
Recommended
Auxiliary Power Supply SMPS
The IPP60R190P6XKSA1 works as the main 600 V MOSFET in a 50-150 W auxiliary SMPS such as a standby supply or appliance control board. Its 20.2 A peak current capacity covers the highest inrush of a hard-switched flyback or quasi-resonant flyback topology. Compared to older 600 V planar MOSFETs, CoolMOS P6 cuts switching loss by 30-50 percent, simplifying EMI filter design. The PG-TO220-3 footprint allows manual-soldered prototypes and field-repairable designs preferred in industrial auxiliary supplies.
Recommended
Recommended Products Summary
Engineering reference data for IPP60R190P6XKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP60R160P6XKSA1 | IPP60R180P6XKSA1 | NTP190N60S5H | STP20N60M2 | FCP190N60E |
|---|---|---|---|---|---|---|
| Package | PG-TO220-3 (through-hole) | PG-TO220-3 - same | PG-TO220-3 - same | PG-TO220-3 - same | PG-TO220-3 - same | PG-TO220-3 - same |
| Brand | Infineon | Infineon | Infineon | onsemi | STMicroelectronics | onsemi |
| Drain-Source Voltage VDS | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| On-Resistance RDS(on) max at 25C | 190 mOhm | 160 mOhm | 180 mOhm | 190 mOhm | 220 mOhm | 190 mOhm |
| Continuous Drain Current ID at Tc=25C | 20.2 A | 23 A | 21 A | 20 A | 18 A | 18.5 A |
| Technology | CoolMOS P6 superjunction | CoolMOS P6 superjunction | CoolMOS P6 superjunction | onsemi SuperFET III | ST MDmesh M2 | onsemi SuperFET II |
| Power Dissipation Ptot at Tc=25C | 151 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate Threshold VGS(th) typical | 3.5 V | 3.5 V | 3.5 V | 4.0 V | 3.5 V | 3.5 V |
| Total Gate Charge Qg typical | 32 nC | 37 nC | 34 nC | 35 nC | 30 nC | 34 nC |
Key Differentiators
- CoolMOS P6 superjunction reduces switching loss versus planar 600 V parts by 30-50 percent (vs STP20N60M2)
- Higher continuous current at 25 degC case temperature versus competing parts (vs FCP190N60E)
- Industrial-grade XKSA1 variant with established distributor inventory (vs NTP190N60S5H)
Design Notes
Estimated: at ID=12 A and RDS(on)=190 mOhm (assuming 2x increase to ~380 mOhm at Tj=125 degC), conduction loss is approximately 12^2 * 0.19 = 27 W (at 25 degC) or 55 W (at 125 degC). With a 30 degC/W heatsink and TO220-3 theta_JA of 62 degC/W (junction-to-case), junction-to-ambient is roughly 92 degC/W total. Designers must use a clip-on heatsink with thermal resistance below 20 degC/W or forced airflow to keep Tj below 125 degC at full load. Always verify junction temperature via thermal probe on prototype.
Use a Kelvin-source connection when driving the gate: tie the gate-driver return to the source lead close to the package, NOT through the power source copper. This minimizes gate-loop inductance and prevents VGS ringing that can over-shoot the +/-20 V VGS absolute maximum. Place a 10-100 ohm gate resistor in series to damp LC resonance between package inductance and MOSFET input capacitance. Estimated: for a 10 nH gate loop and 2 nF Ciss, resonance is at ~36 MHz.
Keep the high-voltage drain copper away from the gate and source traces by at least 4 mm creepage distance. The TO220-3 tab is internally connected to the drain, so a TO-220 insulator pad (silicone or mica with thermal grease) is mandatory when mounting to a grounded heatsink. Estimated: at 600 V working voltage, IPC-2221 minimum creepage is 6 mm; place a sil-pad rated for 5 kV to meet IEC 60950 reinforced insulation for IT equipment.
Do not exceed the +/-20 V VGS absolute maximum rating, even briefly. A negative VGS spike below -20 V can permanently damage the gate oxide. Always include a gate-source 10 kohm pull-down to keep the MOSFET OFF during controller startup, and a 12-15 V Zener clamp across VGS to limit transient over-voltage from stray inductance. Do not parallel multiple IPP60R190P6 without gate-source resistors per device to suppress parasitic oscillation; the 190 mOhm RDS(on) has a positive tempco that helps thermal balancing.
For a totem-pole or half-bridge topology, the body-diode reverse recovery of the IPP60R190P6XKSA1 introduces a loss spike at turn-on. Estimated: with a dI/dt of 500 A/us and trr of ~250 ns, recovery loss is ~30 percent of the switching loss budget in hard-switched PFC. If efficiency is critical, consider the CoolMOS CFD7 fast-diode family (e.g., IPL60R060CFD7AUMA1) as a same-package upgrade. Do NOT use P6 in continuous hard-switching applications above 100 kHz without verifying trr loss in the datasheet.
Compliance Information
RoHS and REACH compliant per Infineon product page; XKSA1 is industrial grade (not AEC-Q100 automotive - use IPB60R190P6 for automotive). Halogen-free status not explicitly stated in retrieved data.
