IRFR9120NTRPBF - 100V P-Channel HEXFET MOSFET, 6.6A | Infineon
MPN: IRFR9120NTRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.86 | $0.86 |
| 10 | $0.74 | $7.40 |
| 100 | $0.62 | $62.00 |
| 500 | $0.49 | $245.00 |
| 1,000 | $0.41 | $410.00 |
| 3,000 | $0.32 | $960.00 |
Drop-in alternatives for IRFR9120NTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR9120NTRLPBF
✅ Drop-In✓ In Stock
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View Datasheet →IRFR120NTRPBF
✅ Drop-In✓ In Stock
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✅ Drop-In📋 Reference alternative (not in catalog)
AP10P10GH-HF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR9120NTRPBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TC=25C | -6.6 A |
| On-Resistance (RDS(on)) max at VGS=-10V | 480 milliohm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Total Gate Charge (Qg) | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | 40 W |
| Operating Junction Temperature Range | -55C to +175C |
| Package | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited floor life) |
| Lead Finish / Plating | Pb-free (PBF suffix), Matte Tin |
| Technology | HEXFET fifth-generation IR MOSFET |
| RoHS Status | Compliant |
| Moisture Sensitivity | MSL1 per JEDEC J-STD-020 |
IRFR9120NTRPBF Pin Configuration
| Pin 1 | Gate — MOSFET gate input, drive from low-impedance source referenced to source pin |
| Pin 2 | Source — P-channel source, internally connected to the metal mounting tab; place on the high-impedance (load) side of the switch |
| Pin 3 | Drain — P-channel drain, internally connected to the metal tab; tie to the positive supply rail |
Safe Operating Area (DC)
Typical Applications
IRFR9120NTRPBF is suitable for 6 applications: High-Side Load Switch in 48V Telecom Systems, Reverse-Polarity Protection Circuit, Solenoid and Relay Driver, DC Motor Drive Half-Bridge, Battery Disconnect Switch, Audio Amplifier Muting Switch.
High-Side Load Switch in 48V Telecom Systems
The IRFR9120NTRPBF fits 48V telecom high-side load switching because its -100V VDS rating provides a 2:1 safety margin over nominal 48V rails, while the 480 milliohm on-resistance keeps conduction loss low for 3-5A continuous loads. Placed between the 48V backplane bus and the load with a gate pull-down resistor and a PNP driver stage, it eliminates the need for a charge pump. The HEXFET avalanche rating tolerates the unclamped inductive transients of failed downstream capacitors, an important reliability consideration in hot-swap and OR-ing topologies. At 4A and 48V, conduction loss is approximately 7.7W, requiring thermal management via the DPAK tab and PCB copper pour.
Recommended
Reverse-Polarity Protection Circuit
The IRFR9120NTRPBF works as a reverse-polarity protection (RPP) switch because its P-channel configuration places the body diode in the correct orientation to block reverse current without external steering. With source tied to the system side and drain to the battery, a positive battery voltage keeps VGS near zero and the device off, while a correctly-connected battery pulls VGS negative and turns it on. The 480 milliohm RDS(on) adds only modest voltage drop at 6.6A - far better than a Schottky diode - and the HEXFET process tolerates the inrush current of bulk input capacitors on hot-plug events. Compared to a Schottky RPP, this P-channel solution saves 200-400 mW of conduction loss.
Recommended
Solenoid and Relay Driver
The IRFR9120NTRPBF is a good fit for solenoid and relay drivers because the 100V VDS rating easily absorbs the back-EMF of 24V and 48V coils when switched off. A freewheeling diode across the coil is mandatory, and the HEXFET avalanche rating provides additional transient protection if the diode is omitted or fails. The 18 nC total gate charge enables direct drive from a microcontroller GPIO through a gate resistor, eliminating the need for a dedicated gate driver IC in cost-sensitive designs. Switching 1A solenoids at 24V dissipates only about 0.5W, well within the 40W thermal budget when the DPAK tab is soldered to the PCB copper pour.
Recommended
DC Motor Drive Half-Bridge
The IRFR9120NTRPBF works as the high-side switch in a brushed DC motor half-bridge because P-channel devices eliminate the need for a bootstrap or charge-pump high-side driver. With the source tied to the motor terminal and the drain to the supply, a logic-level gate signal from a micro can switch a 24V motor at up to 6.6A continuous current. The 480 milliohm RDS(on) keeps dissipation to 15W at 5A, requiring a heatsink for continuous motor operation above 3A. Pair with an N-channel low-side switch such as the IRFR120NTRPBF (also in DPAK) for a compact half-bridge footprint.
Recommended
Battery Disconnect Switch
The IRFR9120NTRPBF fits battery disconnect switches in 12V to 48V battery packs because P-channel high-side placement allows the load to be switched off with a ground-referenced gate signal. The 100V VDS rating provides safety margin for transient voltages during load-dump events, while the 6.6A continuous current handles typical disconnect-rated loads in e-bike, solar, and UPS systems. A 10 kohm gate-source resistor holds the device off during controller reset, and the HEXFET avalanche rating tolerates the inductive kick of the battery wiring inductance. Quiescent current is essentially zero (gate leakage only), preserving battery shelf life.
Recommended
Audio Amplifier Muting Switch
The IRFR9120NTRPBF suits audio amplifier muting switches because the P-channel high-side configuration places the switch in series with the amplifier supply rail, eliminating audible turn-on/turn-off transients when properly sequenced. The 480 milliohm on-resistance adds negligible series resistance (less than 0.05 dB attenuation at 8 ohms), preserving audio fidelity. The HEXFET process produces no measurable current-shot noise or popcorn noise, an important consideration in audio mute circuits where mechanical relays often cause clicks. The DPAK package allows the switch to be placed near the amplifier supply pin for clean PCB layout.
Recommended
Recommended Products Summary
Engineering reference data for IRFR9120NTRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR9120NTRLPBF | IRF7319TRPBF | IRFR120NTRPBF | SiHFR9120TR-GE3 | AP10P10GH-HF |
|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Intertechnology | Advanced Power Electronics |
| Polarity | P-Channel | P-Channel | P-Channel (dual) | N-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -100 V | -30 V | 100 V | -100 V | -100 V |
| Continuous Drain Current (ID) | -6.6 A | -6.6 A | -6.6 A | 9.4 A | [DATA_NEEDED] | [DATA_NEEDED] |
| On-Resistance (RDS(on)) max | 480 milliohm | 480 milliohm | 100 milliohm | 175 milliohm | [DATA_NEEDED] | [DATA_NEEDED] |
| Total Gate Charge (Qg) | 18 nC | 18 nC | 11 nC | 24 nC | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD) | 40 W | 40 W | 2.5 W | 48 W | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS Compliant | Yes (Pb-free) | Yes (Pb-free) | Yes | Yes | Yes | Yes (Halogen-Free) |
Key Differentiators
- P-Channel high-side configuration eliminates gate-drive complexity (vs N-channel MOSFETs in TO-220)
- HEXFET fifth-generation avalanche rating for inductive load robustness (vs Standard planar MOSFETs in same DPAK)
- Industry-standard DPAK footprint shared with IRF7319 dual P-channel (vs Proprietary P-channel packages from other vendors)
Design Notes
The DPAK package can only achieve its 40 W rating when the metal tab is soldered to a PCB copper pad of at least 50 mm squared (approximately 1 square inch) of 2 oz copper. At 100 V VDS and 6.6 A continuous, conduction loss at full load is approximately 20.9 W - well within the rating only with substantial copper. Estimate: P_D = I_D_squared x R_DS(on) = 6.6 x 6.6 x 0.48 = 20.9 W. Designers should add thermal vias to an internal copper plane or use an external heatsink for continuous full-load operation.
The DPAK land pattern must extend the drain pad (pin 3 and the metal tab) to a copper pour that serves as both electrical connection and heatsink. The source pin (pin 2) is also internally connected to the metal tab on most P-channel HEXFET DPAK layouts, so a 'floating' tab arrangement is not possible. Use a minimum 2 oz copper on the drain pad to keep thermal resistance below 50 C/W. A gate-source resistor of 10 kohm placed close to the gate pin prevents dv/dt-induced turn-on in noisy switching environments.
Do not exceed the +/-20 V VGS absolute maximum rating; transient gate over-voltage from a poorly clamped gate driver is the most common failure mode. Always include a freewheeling diode when switching inductive loads (relays, solenoids, motors) because unclamped inductive kick can exceed 100 V even at low supply voltages. Confirm the tab orientation against the molded notch on the package body before soldering - the DPAK has no polarity indicator beyond the notch, and reversing the part can short the drain to the wrong rail.
Compliance Information
Pb-free (PBF suffix) per Infineon datasheet. RoHS and REACH compliant per GlobalSpec product record. Not AEC-Q100 qualified - this is an industrial/consumer part. Halogen-free status not explicitly stated in datasheet.
