IRL540NPBF vs IRLZ44NPBF Comparación
Comparación detallada lado a lado de IRL540NPBF por Infineon y IRLZ44NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRL540NPBF | IRLZ44NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,68 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRL540NPBF | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Planar DMOS) | HEXFET (advanced process) |
| Drain-to-Source Voltage (VDS) | 100 V | 55 V |
| Gate-to-Source Voltage (VGS) max | +/-16 V | — |
| Continuous Drain Current (ID) at Tc=25C | 36 A | — |
| Pulsed Drain Current (IDM) | 130 A (pulsed) | 160 A |
| On-Resistance RDS(on) max | 44 mOhm at VGS=5V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2 V (logic level) | 1.0 V to 2.0 V (typ 1.5 V) |
| Total Gate Charge (Qg) | 49.3 nC | 32 nC |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | -55 °C to +175 °C |
| Encapsulado | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| Tipo de montaje | Through Hole | Through Hole |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |