IRLR3114ZTRPBF - 40V, 130A N-Channel HEXFET MOSFET | Infineon
N.º de pieza: IRLR3114ZTRPBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.78 | $0,78 |
| 10 | $0.74 | $7,40 |
| 100 | $0.65 | $65,00 |
| 500 | $0.58 | $290,00 |
| 1.000 | $0.52 | $520,00 |
| 3.000 | $0.46 | $1.380,00 |
IRLR3114ZTRPBF Descripción general
A power MOSFET such as the IRLR3114ZTRPBF is a voltage-controlled three-terminal semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. HEXFET power MOSFETs belong to the broader power MOSFET family, which sits hierarchically under discrete semiconductors, then power transistors, then switch-mode power conversion. The IRLR3114ZTRPBF's logic-level gate drive (full enhancement at VGS=4.5 V, threshold ~2.5 V) makes it compatible with microcontroller GPIO and standard gate-driver ICs without requiring a charge pump.
Key features include 4.5 mOhm max RDS(on) at VGS=10 V, 42 A continuous drain current at Tc=25 C, 140 W power dissipation at Tc=25 C, fast switching speed, improved repetitive avalanche ruggedness, and a -55 C to +175 C operating junction temperature range. The TO-252AA (DPAK) surface-mount package provides a low-profile footprint suitable for high-density switching power supply, motor drive, and DC-DC converter designs while still offering a tab for thermal dissipation.
Architecturally, the part employs a planar strip-cell HEXFET die with optimized cell pitch to balance RDS(on), gate charge (40 nC typical), and avalanche energy. The combined low gate charge and low on-resistance allow high-efficiency switching at frequencies from 50 kHz to 500 kHz, making it well-suited for synchronous rectification in switch-mode power supplies where conduction and switching losses both matter.
Typical applications include synchronous rectification in isolated and non-isolated DC-DC converters, low-side switch in buck and forward converters, motor drive H-bridge and half-bridge stages, battery protection and OR-ing, hot-swap controllers, and high-current load management in industrial and automotive subsystems.
When designing with this device, the engineer should minimize loop inductance in the source-return and gate-drive paths, place a small gate-source resistor to damp ringing, and ensure that thermal vias or a sufficient copper pour on the DPAK tab keep the junction below the 175 C maximum. Compared to a Schottky diode, this MOSFET offers lower conduction loss above ~20 A but requires careful gate-drive timing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with all values verified against the Infineon HEXFET datasheet and live distributor listings as of 2026-09-13.
Alternativas directas para IRLR3114ZTRPBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRLR3114ZTRPBF (mismo factor de forma y huella) — difiere en Package, Technology, Gate Threshold Voltage (VGS(th)), Lead-Free / RoHS, Operating Temperature Range.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
AUIRLR3114Z
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRLR3114ZPBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFR4104TRPBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRLR3114ZTRPBF Valores máximos y características eléctricas
| Tipo de transistor | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25 C) | 42 A |
| Continuous Drain Current (ID, Tc=100 C) | 30 A |
| Pulsed Drain Current (IDM) | 130 A |
| Gate-Source Voltage (VGS) max | 16 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | 3.81 nF |
| Power Dissipation (Pd, Tc=25 C) | 140 W |
| Temperatura de unión de funcionamiento | -55 C to +175 C |
| Encapsulado | TO-252AA (DPAK) surface mount |
| Tipo de montaje | Surface Mount |
| Número de pines | 3 (2 + tab) |
| Estado RoHS | Compliant |
Configuración de pines de IRLR3114ZTRPBF
| Pin 1 | Gate — Gate drive input (logic-level compatible, 4.5 V typical enhancement) |
| Pin 2 | Drain — Drain terminal, electrically bonded to the metal tab for thermal dissipation |
| Pin 3 | Source — Source terminal, typically tied to system ground on low-side applications |
Área de funcionamiento seguro (DC, Tc=25 C)
Aplicaciones típicas
IRLR3114ZTRPBF es adecuado para 6 aplicacións: Synchronous Rectification in 12V/24V DC-DC Converters, Motor Drive Half-Bridge / H-Bridge Stage, Battery Protection and OR-ing in UPS Systems, Hot-Swap and In-Rush Current Control, Automotive 12V Load Switch and Body Electronics, Class-D Audio Amplifier Output Stage.
Synchronous Rectification in 12V/24V DC-DC Converters
The IRLR3114ZTRPBF is well-suited as the low-side synchronous rectifier in 12 V and 24 V non-isolated buck converters and isolated forward converters. Its 4.5 mOhm RDS(on) at VGS=10 V and 40 V VDS rating leave sufficient headroom above the 16-19 V transient rails of a 12 V automotive/industrial supply. At a 30 A load, the conduction loss is only about 4 W per device, and the low 40 nC total gate charge permits switching frequencies of 200-500 kHz without excessive gate-drive loss, enabling compact high-density POL modules.
Recomendado
Motor Drive Half-Bridge / H-Bridge Stage
The IRLR3114ZTRPBF works as a low-side switch in brushless DC (BLDC) motor half-bridge and H-bridge driver stages for industrial drives, robotics, and small e-mobility. Its 130 A pulsed rating handles motor inrush and stall conditions, while the TO-252AA tab allows direct PCB heatsinking. Logic-level VGS(th) of 2.5 V (typ) means it can be driven directly from 3.3 V gate driver outputs. The 175 C junction rating provides margin for thermally demanding outdoor applications.
Recomendado
Battery Protection and OR-ing in UPS Systems
In battery management systems (BMS), uninterruptible power supplies, and redundant DC rail OR-ing, the IRLR3114ZTRPBF provides low-loss reverse polarity protection and load sharing. Its 4.5 mOhm on-resistance yields only about 450 mV drop at 100 A, dramatically reducing heat dissipation versus Schottky diodes. The 40 V rating comfortably covers 12 V (16 V transients) and 24 V (32 V transients) battery packs. The logic-level gate enables MCU-controlled disconnect.
Recomendado
Hot-Swap and In-Rush Current Control
For hot-swap controllers, the IRLR3114ZTRPBF acts as the load switch that absorbs in-rush during board insertion into a live backplane. Its 130 A pulsed drain current capability and 175 C thermal rating handle the worst-case transient heating during capacitor charging. With the DPAK tab tied to the drain, a copper pour on the system board acts as the heatsink, simplifying thermal design. The 40 nC Qg keeps the controller hot-swap loop stable across fast turn-on edges.
Recomendado
Automotive 12V Load Switch and Body Electronics
Although the standard IRLR3114ZTRPBF is not AEC-Q qualified, its wide operating range (-55 C to +175 C junction) and DPAK form factor suit non-safety automotive body-electronics loads such as LED drivers, seat heaters, and accessory power outlets. For AEC-Q101 mandated subsystems, the AUIRLR3114Z variant is the drop-in alternative. The 40 V VDS rating absorbs load-dump transients up to 35 V, making the part robust against 12 V automotive power quality.
Recomendado
Class-D Audio Amplifier Output Stage
In Class-D audio amplifiers with 12-24 V rails, the IRLR3114ZTRPBF serves as a low-side output switch. Its 4.5 mOhm RDS(on) minimizes conduction loss and on-resistance distortion, while the fast switching speed supports PWM frequencies of 250-500 kHz to push switching noise out of the audio band. The DPAK tab provides a stable thermal path that prevents thermal compression during sustained high-power bass passages.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRLR3114ZTRPBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | AUIRLR3114Z | IRLR3114ZPBF | IRFR4104TRPBF |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Drain-Source Voltage VDS | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 4.5 mOhm | 4.5 mOhm | 4.5 mOhm | 6.5 mOhm (approx +44%) |
| Continuous Drain Current ID (Tc=25 C) | 42 A | 42 A | 42 A | 30-34 A |
| Total Gate Charge Qg | 40 nC @ VGS=4.5 V | 40 nC | 40 nC | 60-70 nC (approx +50%) |
| AEC-Q101 Qualification | Not qualified | AEC-Q101 qualified | Not qualified | Not qualified |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| Unit Price (qty 1, approx) | USD 0.78 | USD 1.10-1.40 | USD 0.80-1.00 | USD 0.65-0.85 |
Diferenciadores clave
- Lower on-resistance than older IR generation at same package (frente a IRFR4104TRPBF)
- Logic-level VGS(th) compatible with 3.3 V/5 V MCUs (frente a Standard 10V-threshold HEXFETs)
- 175 C maximum junction operating temperature (frente a 150 C-rated competing MOSFETs)
Notas de diseño
Estimated: at VDS=24 V, ID=20 A continuous, and switching loss neglected, the IRLR3114ZTRPBF dissipates roughly 1.8 W (I^2*R with R=4.5 mOhm). With a typical DPAK junction-to-ambient thermal resistance of 50 C/W on a 2 oz copper 1 square-inch tab, junction rise is ~90 C above ambient, well below the 175 C rating. For sustained operation above 25 A, add a heatsink or expand copper area to keep Tj under 150 C for long-term reliability.
Minimize the high-current drain-source loop area by placing the device directly above the input/output capacitors. Use wide copper pours on the DPAK tab and stitch thermal vias (6-9 vias, 0.3 mm drill) directly under the tab to inner copper planes. Keep the gate-drive trace short and away from the drain switching node; a 10-100 ohm gate resistor dampens ringing caused by package and trace inductance.
Do not exceed VGS of 16 V; the gate oxide will permanently damage above this threshold. Add a 10 kohm gate-source pull-down resistor to ensure the MOSFET stays off during MCU reset or floating PWM signals. In synchronous rectification, schedule dead-time (typically 50-200 ns) between high-side and low-side transitions to prevent shoot-through that can exceed 130 A pulsed current and destroy the die.
Use the JEDEC TO-252 land pattern with a tab pad of approximately 6.5 mm x 5.5 mm and three 1.0 mm wide Source pads as recommended in the Infineon HEXFET datasheet. Thermal vias under the tab significantly reduce junction temperature; Infineon recommends at least six 0.3 mm vias filled with solder or thermally conductive epoxy for production designs.
Información de cumplimiento
RoHS compliant per LCSC C67278 and JLCPCB listings. Not AEC-Q qualified - for AEC-Q101 requirements choose AUIRLR3114Z as the drop-in automotive alternative. Halogen-free status not explicitly confirmed by Infineon datasheet.
