IRS2153DPBF - 600V Self-Osc Half-Bridge Driver | Infineon
N.º de pieza: IRS2153DPBF ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.95 | $2,95 |
| 10 | $2.65 | $26,50 |
| 100 | $2.32 | $232,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.78 | $1.780,00 |
IRS2153DPBF Descripción general
A half-bridge gate driver is a power-management building block that produces two complementary gate-drive outputs from a single supply rail to switch the high-side and low-side MOSFETs (or IGBTs) of a half-bridge. The high-side stage uses a bootstrap capacitor refreshed through an internal bootstrap FET, eliminating the need for a separate isolated supply. In the broader hierarchy, this IC sits between low-side gate drivers and full H-bridge/three-phase driver ICs, inside the power management IC category.
Key features include 600V maximum offset voltage tolerance on the high-side floating rail, 0.5 us internal oscillator dead-time control, programmable switching frequency via a single RT/CT resistor/capacitor pair, and a shutdown input that latches the outputs low. The integrated bootstrap FET eliminates an external discrete component and simplifies PCB layout. Typical quiescent current VCC supply current is 0.5 mA (typ), and the device operates across an industrial -40C to +125C junction temperature range.
The IRS2153D family is widely used in energy-efficient lighting and motor control. Typical applications include fluorescent electronic ballasts, HID ballasts, LED driver stages, half-bridge DC-DC converters, low-power motor drives and general-purpose switch-mode power supplies. The self-oscillating topology eliminates the need for an external PWM controller, enabling compact, low-BOM-count designs.
Alternativas directas para IRS2153DPBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRS2153DPBF (mismo factor de forma y huella) — difiere en Package, RoHS Status, Topology, Mounting Type, Number of Outputs.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IRS21531DPBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRS2153DSPBF
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.98 / unidad
Ver hoja de datos →IR2153PBF
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.45 / unidad
Ver hoja de datos →IRS2153DPBF Valores máximos y características eléctricas
| Product Type | Half-Bridge Gate Driver IC |
| Driver Configuration | Half-Bridge (High-Side + Low-Side) |
| Topología | Self-Oscillating (RC-timed) |
| Número de salidas | 2 (High-Side, Low-Side) |
| Offset Voltage (High-Side) | 600 V (max) |
| Output Current (Source, typ) | 0.18 A |
| Output Current (Sink, typ) | 0.26 A |
| Dead Time (typ) | 0.5 us |
| Half-Bridge Driver Propagation (typ) | 1.1 us |
| Bootstrap FET | Integrated |
| Supply Current (VCC, typ) | 0.5 mA |
| Shutdown Input | Yes (programmable) |
| Temperatura de unión de funcionamiento | -40C to +125C |
| Encapsulado | 8-Pin PDIP (through-hole) |
| Nivel MSL | MSL2 / MSL3 (per Infineon datasheet family note) |
| Qualification Level | Industrial |
| Estado RoHS | Compliant (Pb-free suffix) |
Configuración de pines de IRS2153DPBF
| Pin 1 | VCC — Low-side and logic supply voltage |
| Pin 2 | RT — Timing resistor for internal oscillator |
| Pin 3 | CT — Timing capacitor for internal oscillator |
| Pin 4 | SD — Shutdown input (logic low latches outputs off) |
| Pin 5 | COM — Low-side return / power ground |
| Pin 6 | LO — Low-side gate-drive output |
| Pin 7 | VS — High-side floating supply return (half-bridge switch node) |
| Pin 8 | HO — High-side gate-drive output |
Aplicaciones típicas
IRS2153DPBF es adecuado para 6 aplicacións: Fluorescent Electronic Ballasts, HID Lamp Ballasts, Half-Bridge DC-DC Converters, LED Driver Stages, Low-Power Motor Drive Inverter, General-Purpose Switch-Mode Power Supplies.
Fluorescent Electronic Ballasts
The IRS2153DPBF's 600 V high-side rating, integrated bootstrap FET and self-oscillating RC timer make it a textbook controller for fluorescent electronic ballasts. Placed at the heart of the half-bridge that drives the resonant LC tank (L ballast inductor + C resonant capacitor), the IC replaces an external oscillator/PWM controller, reducing the BOM count by 5-8 components. With 0.18 A source / 0.26 A sink drive currents, it directly switches the half-bridge MOSFETs without external gate-driver buffers. The integrated shutdown pin allows lamp-fault protection circuitry to latch the outputs low, satisfying IEC 61347-2-3 safety requirements.
Recomendado
HID Lamp Ballasts
High-Intensity Discharge (HID) automotive and projector ballasts use the IRS2153DPBF in the half-bridge inverter stage that converts DC bus (typically 400 V DC from PFC boost) into the AC waveform driving the HID lamp ignitor. The 600 V offset rating comfortably tolerates the 400 V DC bus plus inductive ringing spikes, while the programmable RT/OC oscillator sets the lamp-strike frequency (typically 100-400 Hz) and steady-state run frequency (typically 50-200 Hz). The programmable shutdown pin allows ballast control circuitry to detect end-of-life lamp voltage and latch the driver off, protecting the ballast from over-voltage damage.
Recomendado
Half-Bridge DC-DC Converters
Low-to-medium power isolated and non-isolated half-bridge DC-DC converters (typically 50-500 W) use the IRS2153DPBF as the primary-side controller. With 0.5 us dead time and 1.1 us propagation delay, it supports switching frequencies up to approximately 100 kHz, enabling compact magnetics. The integrated bootstrap FET removes the cost and PCB area of an external discrete bootstrap diode plus resistor. The shutdown input can be wired to a primary-side UVLO/OVP comparator to protect the converter from input transients, replacing a dedicated PWM controller IC.
Recomendado
LED Driver Stages
Offline LED drivers using the IRS2153DPBF benefit from its 600 V high-side rating (covering rectified 220 V AC mains) and self-oscillating topology that eliminates the need for an external PWM IC. In a typical 40-150 W LED driver, the IRS2153DPBF drives the half-bridge feeding the LLC resonant tank, with constant-current regulation implemented via optocoupler feedback to the SD (shutdown) pin for analog dimming. Compared to a dedicated LED driver IC, this approach offers lower BOM cost and proven long-term reliability in the field.
Recomendado
Low-Power Motor Drive Inverter
Small brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) drives in the 50-300 W class use the IRS2153DPBF as the half-bridge driver for simple sensorless or Hall-sensor commutated inverters. The 600 V rating provides ample margin for 110/220 VAC input, while the shutdown pin allows the motor controller MCU to stop switching in fault conditions. The asymmetric 0.18 A source / 0.26 A sink drive is well-matched to small motor-drive MOSFETs such as the IPB50N06S4 family, enabling compact inverter stages for fans, pumps, and small appliances.
Recomendado
General-Purpose Switch-Mode Power Supplies
Low-power resonant and quasi-resonant SMPS designs use the IRS2153DPBF as a low-cost self-oscillating controller. With programmable RT/OC frequency and integrated bootstrap FET, it produces a clean 50% duty cycle on each half-bridge output, ideal for driving LLC and series-resonant topologies in the 30-200 W output range. The industrial -40C to +125C junction temperature range and qualified MSL2/MSL3 packaging support harsh-environment power supplies for industrial automation and outdoor LED signage.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRS2153DPBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IRS21531DPBF | IRS2153DSPBF | IR2153PBF |
|---|---|---|---|---|
| Package | 8-Pin PDIP | 8-Pin PDIP - same | 8-Pin SOIC | 8-Pin PDIP - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| High-Side Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V |
| Source Current (typ) | 0.18 A | 0.18 A | 0.18 A | 0.18 A |
| Sink Current (typ) | 0.26 A | 0.26 A | 0.26 A | 0.26 A |
| Internal Bootstrap FET | Yes (integrated) | Yes (integrated) | Yes (integrated) | Yes (integrated) |
| Dead Time (typ) | 0.5 us | Tighter (IRS21531-specific) | 0.5 us | 0.5 us |
| Propagation Delay (typ) | 1.1 us | 1.1 us | 1.1 us | 1.1 us |
| Lifecycle Status | NRND | Active | NRND | Obsolete (legacy) |
Diferenciadores clave
- Integrated bootstrap FET eliminates external bootstrap diode (frente a Generic 600V half-bridge drivers (e.g. IR2110 family))
- Self-oscillating RC topology eliminates external PWM controller (frente a IRS2110SPBF (requires external PWM signal))
- 600V high-side rating optimized for offline lighting ballasts (frente a IR2109SPBF (lower voltage half-bridge drivers))
Notas de diseño
The IRS2153DPBF's VCC supply requires a local 0.1 uF ceramic bypass capacitor within 5 mm of the VCC pin plus a 10-100 uF bulk electrolytic, as recommended in the Infineon datasheet. The internal bootstrap FET requires a 0.1-1 uF ceramic bootstrap capacitor between VB and VS. Estimated: at 100 kHz switching with 100 nC gate charge, the average bootstrap current is approximately 10 mA, so the bootstrap capacitor must be sized to maintain at least 10V across VB-VS under all load conditions.
The 8-pin PDIP package has a thermal resistance of approximately 80 C/W (junction-to-ambient, free air). At 100 kHz switching with 100 nC total gate charge, the gate-drive losses are approximately 5 mW per MOSFET, so thermal management is rarely a primary concern for the driver IC itself; focus thermal design on the half-bridge MOSFETs. Estimated: at full 600 V bus and 50 kHz, switching losses dominate and the IRS2153DPBF dissipates less than 100 mW.
Route the high-current half-bridge switch-node trace (between the two MOSFETs, to VS) with minimal inductance to limit voltage ringing. Place the bootstrap capacitor (VB to VS) within 5 mm of pins 7 and 8. The CT timing capacitor should be placed close to pin 3 with a short trace to COM (pin 5) to avoid oscillator jitter, as recommended in the Infineon application note.
Do not exceed the maximum high-side offset voltage of 600 V, including inductive transients - add a transient suppressor or RC snubber on the half-bridge switch-node. The shutdown pin (SD) is logic-level sensitive and must not be left floating - tie it to VCC through a 10-100 kohm pull-up resistor for normal operation, or drive it low via an open-drain comparator for fault protection. The RT/CT oscillator timing components must use low-drift (NP0/C0G) capacitors for stable switching frequency across temperature.
Información de cumplimiento
Pb-free suffix 'PBF' indicates RoHS-compliant lead-free finish per Infineon datasheet. Industrial qualification level (not AEC-Q100 qualified for automotive). MSL2/MSL3 per Infineon datasheet family note.
