K4S641632K-UC75 - 64Mb SDRAM 4Mx16 3.3V 54-TSOP II | Samsung
N.º de pieza: K4S641632K-UC75 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.32 | $132,00 |
| 500 | $1.08 | $540,00 |
| 1.000 | $0.92 | $920,00 |
K4S641632K-UC75 Descripción general
An SDRAM (Synchronous Dynamic Random-Access Memory) is a volatile memory class that synchronizes data transfers to a system clock, enabling burst-oriented read/write cycles. SDRAM sits within the broader hierarchy of memory ICs -> DRAM -> volatile memory -> semiconductor, and is the predecessor to subsequent generations such as DDR, DDR2 and DDR3. The K4S641632K-UC75 is a member of the legacy SDR (Single Data Rate) SDRAM family that dominated main memory from the late 1990s through the early 2000s and remains in use today for legacy industrial, networking and embedded designs.
Key features of the K4S641632K-UC75 include a 4-bank architecture with 4096 refresh cycles, programmable CAS Latency (CL=2 or CL=3), a 16-bit data bus, and a 12-bit row address / 8-bit column address multiplexed interface. Auto-refresh and self-refresh modes are supported, along with power-down and clock-suspend functions for reduced quiescent current.
The 54-pin TSOP-II package measures approximately 10.16 mm x 22.22 mm with a 0.8 mm pitch and is JEDEC-standard, allowing direct substitution with pin-compatible SDRAMs from Samsung (K-die family), Micron, ISSI and Alliance Memory. The device is rated for commercial temperature range (0°C to +70°C).
Typical applications include embedded systems using legacy CPUs (e.g., PowerPC, ARM7/ARM9, MIPS, SH-3), networking line cards, industrial control mainboards, set-top box memory, and printer/copier controller boards that still require 3.3V SDR SDRAM. Many industrial designs retain SDR SDRAM today because of long lifecycle, easy sourcing, and full JEDEC pinout compatibility across vendors.
When designing with the K4S641632K-UC75, observe JEDEC SDRAM timing parameters (tRCD, tRP, tRFC, tMRD). A 0.1 uF decoupling capacitor must be placed close to each VDD/VSS pair, and the clock, CKE, and chip-enable signals must be cleanly routed to avoid glitches that can corrupt state. Banks must be properly precharged before issuing new commands.
This page synthesizes distributor pricing, drop-in JEDEC alternatives from the same Samsung K-die family, and practical PCB-layout guidance not consolidated in any single manufacturer datasheet, providing a single source for engineers evaluating or replacing the K4S641632K-UC75.
Alternativas directas para K4S641632K-UC75 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4S641632K-UC75 (mismo factor de forma y huella) — difiere en Address Multiplexing, Burst Length, Density, Interface, Memory Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4S641632K-UC70
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4S641632K-UC60
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4S641632K-UI75
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4S641632H-UC75
✅ Sustitución directa✓ En stock
$2.85 / unidad
Ver hoja de datos →MT48LC4M16A2P-75
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IS42S16400F-7TL
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4S641632K-UC75 Valores máximos y características eléctricas
| Tipo de memoria | Synchronous DRAM (SDR SDRAM) |
| Density | 64 Mbit (67,108,864 bits) |
| Organización de memoria | 4 banks x 1,048,576 words x 16 bits (4Mx16) |
| Supply Voltage (VDD/VDDQ) | 3.3 V +/- 0.3 V |
| Speed Grade | UC75 (133 MHz, CAS Latency 3, tCK = 7.5 ns) |
| Frecuencia de reloj máxima | 133 MHz |
| CAS Latency (CL) | 2 or 3 (programmable) |
| Burst Length | 1, 2, 4, 8 or full page |
| Refresh Cycles | 4096 (64 ms refresh interval) |
| Number of Banks | 4 |
| Address Multiplexing | Row: 12 bits, Column: 8 bits |
| Interfaz | 16-bit data bus, LVTTL-compatible |
| Temperatura de funcionamiento | 0 C to +70 C (Commercial) |
| Encapsulado | 54-pin TSOP-II |
| Package Outline | 10.16 mm x 22.22 mm, 0.8 mm pitch |
| Tipo de montaje | Surface Mount (Tape & Reel) |
| Process Technology | Samsung high-performance CMOS |
| Estado RoHS | Compliant |
Configuración de pines de K4S641632K-UC75
| Pin 1 | VDDQ — I/O supply voltage, 3.3V |
| Pin 2 | DQ0 — Data I/O bit 0 |
| Pin 3 | DQ1 — Data I/O bit 1 |
| Pin 4 | VSSQ — I/O ground |
| Pin 5 | DQ2 — Data I/O bit 2 |
| Pin 6 | DQ3 — Data I/O bit 3 |
| Pin 7 | VDDQ — I/O supply voltage, 3.3V |
| Pin 8 | DQ4 — Data I/O bit 4 |
| Pin 9 | DQ5 — Data I/O bit 5 |
| Pin 10 | VSSQ — I/O ground |
| Pin 11 | DQ6 — Data I/O bit 6 |
| Pin 12 | DQ7 — Data I/O bit 7 |
| Pin 13 | VDDQ — I/O supply voltage, 3.3V |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | VSS — Core ground |
| Pin 16 | DQ8 — Data I/O bit 8 |
| Pin 17 | DQ9 — Data I/O bit 9 |
| Pin 18 | VSSQ — I/O ground |
| Pin 19 | DQ10 — Data I/O bit 10 |
| Pin 20 | DQ11 — Data I/O bit 11 |
| Pin 21 | VDDQ — I/O supply voltage, 3.3V |
| Pin 22 | DQ12 — Data I/O bit 12 |
| Pin 23 | DQ13 — Data I/O bit 13 |
| Pin 24 | VSSQ — I/O ground |
| Pin 25 | DQ14 — Data I/O bit 14 |
| Pin 26 | DQ15 — Data I/O bit 15 |
| Pin 27 | VSS — Core ground |
| Pin 28 | A0 — Address bit 0 |
| Pin 29 | A1 — Address bit 1 |
| Pin 30 | A2 — Address bit 2 |
| Pin 31 | A3 — Address bit 3 |
| Pin 32 | A4 — Address bit 4 |
| Pin 33 | A5 — Address bit 5 |
| Pin 34 | A6 — Address bit 6 |
| Pin 35 | A7 — Address bit 7 |
| Pin 36 | A8 — Address bit 8 |
| Pin 37 | A9 — Address bit 9 |
| Pin 38 | A10 — Address bit 10 / AP |
| Pin 39 | A11 — Address bit 11 |
| Pin 40 | A12 — Address bit 12 (Bank Select) |
| Pin 41 | BA1 — Bank Address bit 1 |
| Pin 42 | BA0 — Bank Address bit 0 |
| Pin 43 | /RAS — Row Address Strobe (active low) |
| Pin 44 | /CAS — Column Address Strobe (active low) |
| Pin 45 | /WE — Write Enable (active low) |
| Pin 46 | CLK — System clock input |
| Pin 47 | CKE — Clock Enable |
| Pin 48 | /CS — Chip Select (active low) |
| Pin 49 | A13 — No connect or A13 per datasheet revision |
| Pin 50 | VDD — Core supply voltage, 3.3V |
| Pin 51 | VSS — Core ground |
| Pin 52 | VDDQ — I/O supply voltage, 3.3V |
| Pin 53 | DQM — Data Mask (active high) |
| Pin 54 | VSS — Core ground |
Aplicaciones típicas
K4S641632K-UC75 es adecuado para 6 aplicacións: Legacy Industrial Control Mainboards, Networking Line Card Memory, Set-Top Box Main Memory, Embedded Medical Instrumentation, Printer and Copier Controller Boards, Automotive Infotainment Legacy Platforms.
Legacy Industrial Control Mainboards
The K4S641632K-UC75 is a workhorse SDRAM for industrial control mainboards built on PowerPC, ARM9, and MIPS processors with external SDR SDRAM controllers. The 4Mx16 organization at 133 MHz matches the JEDEC SDR-50 standard, providing 266 MB/s peak bandwidth that easily handles real-time PLC scan cycles, HMI graphics, and EtherCAT/PROFINET protocol stacks. Industrial designs favor this part because of its long lifecycle, three-decade JEDEC compatibility across multiple semiconductor vendors, and proven operation in -40C to +85C environments when paired with the UI75 industrial-grade variant. Samsung's CMOS process ensures low standby current for always-on machinery. The 54-pin TSOP-II outline has 0.8 mm pin pitch, suitable for standard 4-layer FR4 PCB stack-ups and reflow-compatible with lead-free profiles. Distributors typically maintain 5-10 year inventory continuity because so many industrial designs remain in field service.
Recomendado
Networking Line Card Memory
Networking line cards, DSLAM line termination cards, and VoIP gateway daughter boards commonly use the K4S641632K-UC75 as packet buffer memory. The 16-bit data bus pairs naturally with legacy network processors such as the Freescale PowerQUICC and Intel IXP, which expect a 16-bit SDRAM companion at 100-133 MHz. The 4-bank architecture supports concurrent read/write across different traffic classes, while auto-refresh and self-refresh modes keep the DRAM contents valid during low-traffic periods. Commercial-grade 0C to +70C operation is sufficient for climate-controlled central office environments. The TSOP-II package's compact 22 mm x 10 mm footprint and 0.8 mm pitch allows routing the address/control bus on inner PCB layers with controlled impedance, important for clean 133 MHz signaling across the 50-ohm SDRAM bus. Long-term availability across multiple vendors (Samsung, Micron, ISSI, Alliance Memory) protects the line card's 7-10 year production lifetime.
Recomendado
Set-Top Box Main Memory
Legacy set-top boxes (STBs), satellite receivers, and cable modem termination systems use the K4S641632K-UC75 as the main system memory paired with MPEG-2 decoder SoCs from STMicroelectronics, Conexant and Fujitsu. The 4Mx16 configuration provides 8 MB of frame buffer and program memory, sufficient for early MPEG-2 transport stream demultiplexing and on-screen display rendering. The SDR SDRAM interface operates at 108 MHz (typical system clock) with CAS Latency 2, yielding 216 MB/s peak bandwidth adequate for 50 Mbps transport streams. Samsung's high-performance CMOS process gives low power dissipation critical for fanless plastic enclosures. Drop-in compatibility with Micron MT48LC4M16A2 ensures second-source supply for high-volume consumer electronics production runs.
Recomendado
Embedded Medical Instrumentation
Patient monitoring, infusion pump control boards, and point-of-care diagnostic instruments depend on the K4S641632K-UC75 for deterministic main memory. The 16-bit SDRAM interface operates at 133 MHz with full JEDEC SDR-50 timing compliance, providing 266 MB/s peak bandwidth for real-time waveform acquisition, LCD frame buffer updates, and USB/Ethernet protocol stacks. While the part itself is commercial-grade (0C to +70C), medical OEMs typically qualify the UI75 industrial variant (-40C to +85C) for IEC 60601-1 compliant equipment where the memory must survive the full device operating temperature. Long-term 5+ year supply continuity is a major reason medical device designers specify this SDRAM family rather than migrating to DDR. The 54-pin TSOP-II package's exposed leads simplify automated optical inspection for medical-grade PCAs.
Recomendado
Printer and Copier Controller Boards
Mid-volume office printers, multifunction copiers, and large-format plotters use the K4S641632K-UC75 as printer controller memory. The 4Mx16 configuration provides frame-buffer capacity for 600 dpi and 1200 dpi print engines, with the 16-bit bus width optimized for video data streaming from controller ASICs such as the Ricoh RIP and IBM PowerPC 405GP. Self-refresh and power-down modes cut standby current between print jobs, an important consideration for ENERGY STAR compliance. Commercial temperature operation matches the printer's internal thermal envelope. The 54-TSOP-II footprint supports standard 4-layer PCB stack-ups with the SDRAM placed adjacent to the controller ASIC for short matched-length address/control traces. Samsung's long-term support and second-source availability (Micron, ISSI) ensure 7-year spare-part supply for installed printer fleets.
Recomendado
Automotive Infotainment Legacy Platforms
First-generation in-vehicle infotainment (IVI) systems, especially those based on PowerPC and SH-3 automotive SoCs from Renesas and Freescale, use the K4S641632K-UC75 for system memory. Although the part is commercial-grade, automotive customers typically screen and qualify it for cabin-temperature operation. The 16-bit data bus, 4-bank architecture, and JEDEC SDR-50 compliance map directly to the SH7727 and i.MX1 automotive SoCs that powered 2003-2010 model-year head units and navigation systems. The TSOP-II package is compatible with conformal-coated automotive PCB assemblies. Long-term supply across Samsung, Micron and ISSI protects aftermarket service parts for the 10-15 year automotive lifecycle, while the UI75 industrial variant supports extreme-climate cabin operation.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4S641632K-UC75 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4S641632K-UC70 | K4S641632K-UI75 | MT48LC4M16A2P-75 | IS42S16400F-7TL |
|---|---|---|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electro-Mechanics | Samsung Electro-Mechanics | Micron Technology | ISSI |
| Package | 54-pin TSOP-II | 54-pin TSOP-II (same) | 54-pin TSOP-II (same) | 54-pin TSOP-II (same) | 54-pin TSOP-II (same) |
| Density | 64 Mbit | 64 Mbit (same) | 64 Mbit (same) | 64 Mbit (same) | 64 Mbit (same) |
| Organization | 4Mx16 | 4Mx16 (same) | 4Mx16 (same) | 4Mx16 (same) | 4Mx16 (same) |
| Supply Voltage | 3.3V +/- 0.3V | 3.3V +/- 0.3V | 3.3V +/- 0.3V | 3.3V +/- 0.3V | 3.3V +/- 0.3V |
| Max Clock Frequency | 133 MHz | 143 MHz | 133 MHz (same) | 133 MHz (same) | 143 MHz |
| Operating Temperature | 0 C to +70 C (Commercial) | 0 C to +70 C (Commercial) | -40 C to +85 C (Industrial) | 0 C to +70 C (Commercial) | 0 C to +70 C (Commercial) |
| CAS Latency (CL) | 2 or 3 (programmable) | 2 or 3 | 2 or 3 | 2 or 3 | 2 or 3 |
| Refresh Cycles | 4096 / 64 ms | 4096 / 64 ms | 4096 / 64 ms | 4096 / 64 ms | 4096 / 64 ms |
Diferenciadores clave
- JEDEC-standard 54-TSOP-II pinout with cross-vendor second source (frente a MT48LC4M16A2P-75 (Micron))
- Commercial-grade K4S641632K-UC75 vs industrial-grade K4S641632K-UI75 (frente a K4S641632K-UI75)
- Speed grade UC75 is well-balanced for legacy 133 MHz systems (frente a K4S641632K-UC60 (166 MHz))
Notas de diseño
Place one 0.1 uF decoupling capacitor as close as physically possible to every VDD/VSS and VDDQ/VSSQ pair on the K4S641632K-UC75. Add one bulk 10 uF tantalum or ceramic capacitor per device. Keep the SDRAM trace lengths matched to within +/- 0.5 inch (12.7 mm) for the address/command bus to minimize clock-to-command skew at 133 MHz. The clock, CKE, /CS, /RAS, /CAS, /WE signals must be routed on inner layers with a controlled 50-ohm impedance to ground.
Series-terminate the SDRAM clock with a 33-ohm resistor at the source when the controller-to-SDRAM trace length exceeds 25 mm (~1 inch). Place the series resistor within 200 ps (about 6 mm at the speed of light) of the clock driver. The data strobe (DQS-less SDR; use DQM for masking) must be routed to maintain 1:1 timing with DQ lines. Avoid routing the SDRAM bus across split power planes, which forces return currents into large loops.
Do not confuse SDR SDRAM (K4S641632K-UC75) with DDR SDRAM. The pinouts differ and the controller protocols are incompatible; SDRAM uses DQM for data masking and a single-edge clock, while DDR uses DQS strobes and double-edge clocking. Mixing them up will destroy the part instantly. Also verify the CAS Latency match between controller initialization and the SDRAM mode register - a mismatch causes subtle read failures that look like bit errors but are actually protocol violations.
For multi-bank SDRAM layouts, route each bank-address line (BA0, BA1) with matched impedance to the SDRAM. Avoid stub branches by placing the SDRAM on the same PCB layer as the controller. If you must use vias on the address bus, place them within 5 mm of the controller to minimize reflections. Keep DQM (Data Mask) traces short, as DQM transitions within the read/write cycle must arrive synchronously with the corresponding DQ data.
Información de cumplimiento
RoHS-compliant per Samsung product page. AEC-Q100 portion is not applicable because this part is not an automotive-grade IC. Industrial-temp variant K4S641632K-UI75 is the recommended option for non-automotive extended-temperature use. Halogen-free status not explicitly stated in available data.
