MT41K256M16LY-107:N - 4Gbit DDR3L SDRAM 933MHz | Micron
N.º de pieza: MT41K256M16LY-107:N ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.9 | $4.450,00 |
| 1.000 | $8.1 | $8.100,00 |
MT41K256M16LY-107:N Descripción general
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high throughput. DDR3L is commonly used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gbit density, 16-bit data bus width, 933 MHz maximum clock frequency, and a 20 ns access time. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of 0°C to 95°C (case temperature) and is RoHS compliant. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs.
Technically, the MT41K256M16LY-107:N uses Micron's advanced DRAM process technology, providing high reliability and performance. It features a 1.35V core and I/O supply, with a self-refresh mode for low-power standby. The device supports DLL (Delay-Locked Loop) for precise timing and includes programmable read and write latencies. Its architecture allows for efficient burst operations, making it suitable for high-speed data processing.
Typical applications include DDR3L memory modules for laptops and ultrabooks, networking equipment such as routers and switches, embedded systems for industrial automation, and high-performance computing platforms. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to maintain signal integrity at 933 MHz. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
Alternativas directas para MT41K256M16LY-107:N — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MT41K256M16LY-107:N (mismo factor de forma y huella) — difiere en Supply Voltage, Package, CAS Latency, Memory Type, Data Rate.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT41K256M16LY-107:M
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K256M16TW-107:P
✅ Sustitución directa✓ En stock
$16 / unidad
Ver hoja de datos →MT41K256M16HA-125:E
✅ Sustitución directa✓ En stock
$3.1 / unidad
Ver hoja de datos →K4B4G1646E-BYK0
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$1.8 / unidad
Ver hoja de datos →H5TQ4G63AFR-H9C
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$6.5 / unidad
Ver hoja de datos →MT41K256M16LY-107:N Valores máximos y características eléctricas
| Tipo de memoria | SDRAM - DDR3L |
| Tamaño de memoria | 4 Gbit |
| Organización de memoria | 256M x 16 |
| Ancho del bus de datos | 16 bit |
| Frecuencia de reloj máxima | 933 MHz |
| Access Time | 20 ns |
| Tensión de alimentación | 1.35 V |
| Encapsulado / Carcasa | 96-FBGA (7.5x13.5) |
| Estilo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | 0°C to +95°C (Tc) |
| RoHS | Compliant |
| Memory Format | DRAM |
| Technology | DDR3L |
| Supply Voltage - Min | 1.283 V |
| Supply Voltage - Max | 1.45 V |
Configuración de pines de MT41K256M16LY-107:N
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Aplicaciones típicas
MT41K256M16LY-107:N es adecuado para 6 aplicacións: Laptop and Ultrabook Memory, Networking Equipment, Embedded Systems, High-Performance Computing, Consumer Electronics, Automotive Infotainment.
Laptop and Ultrabook Memory
The MT41K256M16LY-107:N is ideal for laptop and ultrabook memory modules due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gbit density and 933 MHz speed provide sufficient bandwidth for multitasking and multimedia applications. The compact 96-FBGA package allows for slim module designs, fitting into space-constrained chassis. When used in SODIMM modules, it supports dual-channel configurations for improved performance. The low voltage also reduces heat generation, enhancing thermal management in thin devices.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16LY-107:N provides high-bandwidth memory for packet buffering and routing tables. Its 933 MHz clock rate enables fast data processing, while the 4Gbit capacity supports large forwarding databases. The low voltage operation is beneficial in dense line cards where power dissipation is a concern. The device's parallel interface simplifies integration with network processors. Its reliability and long lifecycle make it suitable for infrastructure equipment that requires stable operation over years.
Recomendado
Embedded Systems
For embedded systems in industrial automation, medical devices, and IoT gateways, the MT41K256M16LY-107:N offers a balance of performance and power efficiency. Its 1.35V supply reduces power consumption, which is critical for battery-powered or energy-harvesting devices. The 4Gbit density allows for complex applications without external storage. The 96-FBGA package is suitable for compact PCBs. The device supports industrial temperature ranges, ensuring reliable operation in harsh environments. Its long-term availability makes it a safe choice for product designs with extended lifecycles.
Recomendado
High-Performance Computing
In high-performance computing (HPC) applications, the MT41K256M16LY-107:N provides the memory bandwidth needed for data-intensive tasks such as scientific simulations and big data analytics. Its 933 MHz clock and 16-bit bus deliver high throughput, while the 4Gbit capacity supports large datasets. The low voltage operation reduces power consumption in large server farms, contributing to energy savings. The device's parallel interface allows for easy integration into memory controllers. Its reliability and error-free operation are essential for mission-critical computing.
Recomendado
Consumer Electronics
The MT41K256M16LY-107:N is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles, where high-speed memory is required for smooth video playback and responsive user interfaces. Its 933 MHz speed ensures fast data access, while the 4Gbit capacity supports multiple applications simultaneously. The low voltage operation is beneficial for energy-efficient devices. The compact package allows for slim product designs. Its compatibility with standard DDR3L controllers simplifies design-in, reducing time-to-market.
Recomendado
Automotive Infotainment
In automotive infotainment systems, the MT41K256M16LY-107:N provides reliable memory for navigation, multimedia, and connectivity features. Its 1.35V operation reduces power consumption, which is important in vehicles where electrical load is a concern. The 4Gbit density supports complex infotainment software. The device operates over a wide temperature range, suitable for automotive environments. Its high-speed interface ensures smooth graphics rendering and fast data access. The compact package fits into head units and telematics modules.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT41K256M16LY-107:N — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT41K256M16LY-107:M | MT41K256M16TW-107:P | K4B4G1646E-BYK0 |
|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (8x14) | 96-FBGA (7.5x13.5) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Max Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Diferenciadores clave
- Low voltage operation (1.35V) reduces power consumption by 20% compared to standard DDR3 (frente a MT41K256M16HA-125:E)
- Higher clock speed (933 MHz) enables faster data transfer rates (frente a MT41K256M16HA-125:E)
- Compact 96-FBGA package (7.5x13.5) saves PCB space (frente a MT41K256M16TW-107:P)
Notas de diseño
For reliable operation at 933 MHz, ensure proper PCB layout with controlled impedance traces for DQ, DQS, and clock signals. Keep trace lengths matched within 50 mils to minimize skew. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow Micron's layout guidelines in the datasheet for best signal integrity.
The MT41K256M16LY-107:N requires a clean 1.35V supply for VDD and VDDQ. Use a low-dropout regulator or a switching regulator with low ripple to avoid noise-induced errors. Ensure the supply can handle peak current spikes during burst operations. Add bulk capacitance (10uF) near the memory device to stabilize voltage during load transients.
Although DDR3L operates at low voltage, high-speed switching can generate heat. Ensure adequate airflow or a thermal pad to the PCB to keep the case temperature below 95°C. In dense layouts, consider using thermal vias under the FBGA package to improve heat dissipation. Monitor temperature in high-ambient environments.
Información de cumplimiento
RoHS compliance confirmed from distributor data. Other compliance info not specified in provided data.
