MRFE6P9220HR3 vs MRF6P9220HR3 Comparación
Comparación detallada lado a lado de MRFE6P9220HR3 por NXP Semiconductors y MRF6P9220HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRFE6P9220HR3 | MRF6P9220HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $232,20 | $58,40 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode, Lateral | N-Channel Lateral MOSFET (RF Power) |
| Technology | RF Power MOSFET | LDMOS, enhancement-mode |
| Frequency Range | 865 MHz to 1000 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Drain Current | 1.6 A | — |
| Output Power (Avg, N-CDMA) | 47 W | — |
| Peak Output Power | 200 W | — |
| Power Gain (Typ) | 20 dB at 880 MHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency % at 47 W avg] | [DATA_NEEDED: efficiency at test] |
| Encapsulado | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount | NI-860C3 (ceramic, flange-mount) |
| Configuration | Common source, 2 elements | Common-source, single-ended |
| Tipo de montaje | Surface Mount with copper heatsink pad | Surface/chassis mount (flange to heatsink) |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max / operating range] | — |
| Lead Free Status | Lead Free | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF6P9220HR3 |
| Drain-Source Voltage (VDS) | — | 28 V typical |
| Typical Output Power (Pout) | — | 47 W (average, N-CDMA) |
| Power Gain (Gp) | — | 20 dB typical |
| Drain Current at Test (ID) | — | [DATA_NEEDED: drain current at Pout test] |
| Quiescent Bias Current (IDQ) | — | 1.6 A typical |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, up to ~1 GHz typical) |
| Application | — | Base-station PA, N-CDMA, industrial RF |
| Operating Mode | — | Enhancement mode |