MT41K256M16HA-107:E - 4Gbit DDR3L SDRAM 933MHz | Micron
N.º de pieza: MT41K256M16HA-107:E ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $7.89 | $7,89 |
| 10 | $7.1 | $71,00 |
| 100 | $6.3 | $630,00 |
| 500 | $5.6 | $2.800,00 |
| 1.000 | $5 | $5.000,00 |
MT41K256M16HA-107:E Descripción general
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a parallel interface with a data rate of 933 MHz (DDR3L-1866), a burst length of 8, and support for on-die termination (ODT) and posted CAS. The device is RoHS compliant and lead-free, meeting environmental standards. The 96-FBGA package offers a compact footprint with a 9x14 mm body, enabling high-density memory designs.
Technically, the MT41K256M16HA-107:E uses Micron's advanced DRAM process technology, providing high reliability and performance. It supports a self-refresh mode for low-power standby and a temperature-compensated self-refresh (TCSR) feature. The device is designed for a wide operating temperature range of 0°C to 95°C (case temperature), making it suitable for industrial applications.
Typical applications include networking equipment, enterprise storage, embedded computing, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for space-constrained designs requiring large memory capacity.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
Alternativas directas para MT41K256M16HA-107:E — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MT41K256M16HA-107:E (mismo factor de forma y huella) — difiere en Package, CAS Latency, Data Rate, Supply Voltage, Operating Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →MT41K256M16HA-107:E Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Tamaño de memoria | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Tensión de alimentación | 1.35V |
| Encapsulado | 96-FBGA (9x14 mm) |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | 0°C to 95°C (Tc) |
| Interfaz | Parallel |
| Velocidad de datos | 1866 MT/s |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
| Número de pines | 96 |
| Organización de memoria | 256M x 16 |
| Latencia CAS | 13 (typical) |
Configuración de pines de MT41K256M16HA-107:E
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VDD — Power supply |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VDDQ — I/O power supply |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
Aplicaciones típicas
MT41K256M16HA-107:E es adecuado para 6 aplicacións: Networking Equipment, Enterprise Storage, Embedded Computing, Consumer Electronics, Automotive Infotainment, Industrial Automation.
Networking Equipment
The MT41K256M16HA-107:E provides high-bandwidth memory for routers, switches, and network appliances. Its 1866 MT/s data rate supports fast packet processing and routing tables. The low 1.35V operation reduces power consumption in always-on network devices, while the 96-FBGA package enables compact line card designs. With a 4Gbit density, it can buffer large amounts of network data, improving throughput and reducing latency.
Recomendado
Enterprise Storage
In enterprise storage systems, the MT41K256M16HA-107:E serves as cache memory for RAID controllers and SSDs. Its high speed and low power are ideal for data caching and metadata storage. The 4Gbit capacity allows efficient handling of large I/O queues, while the 1.35V supply minimizes power in dense storage arrays. The 96-FBGA package supports high-density memory modules, enabling scalable storage solutions.
Recomendado
Embedded Computing
The MT41K256M16HA-107:E is used in embedded computing applications such as industrial PCs, medical devices, and point-of-sale terminals. Its low voltage and compact package are ideal for space-constrained designs. The 933 MHz clock provides sufficient bandwidth for real-time data processing, while the wide temperature range (0°C to 95°C) ensures reliability in harsh environments. The 4Gbit density supports complex operating systems and applications.
Recomendado
Consumer Electronics
In consumer electronics like set-top boxes, smart TVs, and gaming consoles, the MT41K256M16HA-107:E provides high-speed memory for multimedia processing. Its 1866 MT/s data rate supports smooth video playback and responsive user interfaces. The low 1.35V operation extends battery life in portable devices, while the 96-FBGA package enables slim product designs. The 4Gbit capacity is sufficient for modern applications and multitasking.
Recomendado
Automotive Infotainment
The MT41K256M16HA-107:E is suitable for automotive infotainment systems, providing memory for navigation, audio, and display processing. Its low power consumption is critical for vehicle battery life, and the 96-FBGA package withstands vibration and temperature variations. The 933 MHz clock ensures smooth operation of multimedia interfaces. The 4Gbit density supports complex maps and media libraries.
Recomendado
Industrial Automation
In industrial automation, the MT41K256M16HA-107:E is used in PLCs, robotics, and machine vision systems. Its high speed and reliability are essential for real-time control and data acquisition. The wide temperature range and low power make it suitable for factory floor environments. The 4Gbit capacity allows buffering of large sensor data streams, while the 96-FBGA package fits into compact control modules.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT41K256M16HA-107:E — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT41K256M16HA-107G:E | MT41K256M16HA-125:E | H5TQ4G63AFR | K4B4G1646D |
|---|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron | Micron | Micron | SK Hynix | Samsung |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 800 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Higher speed grade (933 MHz) compared to -125:E (frente a MT41K256M16HA-125:E)
- Low voltage operation (1.35V) (frente a Standard DDR3 (1.5V))
- Cross-brand compatibility (frente a H5TQ4G63AFR (SK Hynix))
Notas de diseño
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Follow the layout guidelines in the Micron datasheet for signal integrity, including controlled impedance traces for DQ and DQS signals.
The MT41K256M16HA-107:E operates up to 95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to avoid exceeding limits.
Use proper termination for DDR3L signals, such as on-die termination (ODT) and motherboard termination. Keep trace lengths matched for address and data buses to minimize skew. Refer to Micron's design guide for DDR3L routing recommendations.
Información de cumplimiento
RoHS compliant per Micron product page. Lead-free. AEC-Q100 not applicable for standard DDR3L.
